The Chemistry of Arsenic, Antimony and Bismuth

Burford, Neil; Carpenter, Yuen Ying; Conrad, Eamonn; Saunders, Cheryl D. L.

doi:10.1002/9780470975503.ch1

Cited by 14 publications

(21 citation statements)

References 57 publications

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“…Few-layer structures of layered phosphorus allotropes, such as black phosphorus, are rapidly attracting attention due to their combination of high mobility and significant band gaps [4][5][6][7]. We find it conceivable that other isoelectronic systems, such as arsenic, may display similar structural and electronic properties as few-layer phosphorene while being chemically much less reactive [8]. In this respect, the most abundant grey arsenic allotrope is the structural counterpart of the layered A7 or blue phosphorus [5].…”

Section: Strain-induced Metal-semiconductor Transition In Monolayers mentioning

confidence: 99%

“…The higher carrier mobility in bulk grey As and black P over bulk MoS 2 [10] has also been observed in ultrathin black phosphorus films [4], and the same is expected for monolayers and bilayers of arsenic as well. Of the two group V elements, the heavier arsenic appears more resilient to oxidation [8]. If indeed grey arsenic monolayers and bilayers turn out to be chemically stable, arsenic may become an excellent contender for a new generation of 2D nano-electronic devices.…”

Section: Strain-induced Metal-semiconductor Transition In Monolayers mentioning

confidence: 99%

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Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

2015

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Section: Strain-induced Metal-semiconductor Transition In Monolayers mentioning

confidence: 99%

Section: Strain-induced Metal-semiconductor Transition In Monolayers mentioning

confidence: 99%

Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

2015

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“…Since both structures are almost equally stable, we may expect phase coexistence that should bring an unexpected richness in both structural and electronic properties [5,16,18,19]. This way of isoelectronic doping could turn into an effective way to fine tune the electronic properties, improve the carrier mobility [5] and reduce the chemical reactivity of the compound from those of pristine of phosphorene and arsenene [20].…”

Section: Introductionmentioning

confidence: 99%

Structural Transition in Layered As_1–xP_x Compounds: A Computational Study

2015

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As a way to further improve the electronic properties of group V layered semiconductors, we propose to form in-layer 2D heterostructures of black phosphorus and grey arsenic. We use ab initio density functional theory to optimize the geometry, determine the electronic structure, and identify the most stable allotropes as a function of composition. Since pure black phosphorus and pure grey arsenic monolayers differ in their equilibrium structure, we predict a structural transition and a change in frontier states, including a change from a direct-gap to an indirect-gap semiconductor, with changing composition.

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“…Various industrial applications of Sb have led to an increasing release of Sb into the environment by human activities (Filella et al 2002a;Burford et al 2010). As a consequence, Sb contamination has become a growing concern over the last 10 years, and the biogeochemistry of Sb has also attracted more interest of researchers (Baroni et al 2000;Shotyk et al 2005; Uptake of different forms of antimony by wheat and rye seedlings Nakamaru et al 2006;He 2007;Filella et al 2009;Wilson et al 2010).…”

Section: Introductionmentioning

confidence: 99%