The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements

Kroon, R.E.

doi:10.1016/j.infrared.2007.02.002

Cited by 12 publications

(6 citation statements)

References 34 publications

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“…23 The vibrational frequency and the e 1 value remain close to the one of ZnO[Au (1.8) /ZnO] 75 , i.e., 400 cm À1 and 18, respectively. The plasmon energy of 11 eV is larger than the one of pure Au, 9 eV.…”

Section: -6mentioning

confidence: 68%

“…The dielectric function for pure ZnO and for as-prepared ZnO[Au (1.8) /ZnO] 75 , is written as the sum of a constant contribution due to bound electrons, e 1 , and Gaussian components which take into account the absorption of distributions of vibrational modes occurring in disordered materials. 16,23 Each absorption band j is characterized by three parameters, A j , x j , and r j , which represent respectively the amplitude, the peak position and the full width at half maximum. The fitting procedure also needs to introduce the film thickness, d, and substrate thickness.…”

Section: Infrared Spectroscopy: Zno Structural Characterizationmentioning

confidence: 99%

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Effects of Au layer thickness and number of bilayers on the properties of Au/ZnO multilayers

Céspedes

Babonneau

Meneses

et al. 2011

Journal of Applied Physics

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Multilayered films of Au/ZnO were prepared by physical vapor deposition. Varying the Au thickness, t Au , and the number of bilayers, n, allowed us to investigate the role of these parameters on the sample structural and electronic properties. X-ray diffraction, X-ray absorption spectroscopy, grazing incidence small angle X-ray scattering and transmission electron microscopy experiments, have been combined to UV-visible and infrared spectroscopy to characterize the multilayers in the as-prepared state and after annealing. In the as-prepared state, the strong Au and ZnO lattice interaction leads to ZnO epitaxy on Au. Gold appears either as continuous layers or in form of nanoparticles. ZnO experiences a structural transformation from wurztite to rock salt monitored by the Au morphology. Annealing at 500 C destroys the lattice matching. The electronic and optical properties of the systems are understood in line with the Au morphology and ZnO structural state.

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Section: -6mentioning

confidence: 68%

Section: Infrared Spectroscopy: Zno Structural Characterizationmentioning

confidence: 99%

Effects of Au layer thickness and number of bilayers on the properties of Au/ZnO multilayers

Céspedes

Babonneau

Meneses

et al. 2011

Journal of Applied Physics

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“…The contribution of the free carrier species ε fc ( ω ) to the dielectric function can be described using classical Drude approximation [ 15 ]: with …”

Section: Methodsmentioning

confidence: 99%

“…Thus, proper selection of spectral analysis algorithm and the form of dielectric function are of great importance for the analysis of the IR reflectance spectra of multilayer GaN-on-sapphire structures [ 15 – 17 ]. This paper shows a possibility of application of IR reflectance spectroscopy and 2 × 2 transfer matrix method for the analysis of planar GaN-based multilayer structures with non-uniform depth and doping profiles, which in practice can be different type of semiconductor III-nitride-based device structures with vertical design, such as light-emitting and rectifying diodes, Gunn diodes, high electron mobility transistors (HEMTs), etc.…”

Section: Introductionmentioning

confidence: 99%

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

et al. 2017

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Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n+/n0/n+-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

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“…The minimum (threshold) of the reflectance spectrum occurs at slightly higher frequency than plasma p ω , and can be found by [36], where…”

Section: ( )mentioning

confidence: 99%

Optoelectronic properties correlation to preparation of Au/La-oxide nanocomposite films

Dakhel

2013

SCI SINTER

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Gold nanoparticles were grown in La-oxide thin films deposited on quartz and silicon substrates. These films were annealed in pure hydrogen gas atmosphere at 300°C for different durations 15 min, 30 min, and 45 min and characterised by the X-ray fluorescence (XRF) and X-ray diffraction. The matrix La-oxide remained amorphous up to 400°C. The fraction of Au in La-oxide host material was 7 % molar with crystallite size of 6.8 nm. The Au NPs slightly grew by annealing in H2 gas at 300 K. The samples were investigated by UV-Vis-NIR absorption spectroscopy and dc-electrical measurements. They exhibit conducting properties and with H2 gas annealing, they showed red shifting of the bandgap with remarkable reduction of optical absorption coefficient by ~25 % and remarkable increase in electrical conductivity ~124 %. A global study of the influence of low-temperature post annealing in H2 gas on the electrical, structural, optical, and optoelectronic properties was conducted

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The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements

Cited by 12 publications

References 34 publications

Effects of Au layer thickness and number of bilayers on the properties of Au/ZnO multilayers

Effects of Au layer thickness and number of bilayers on the properties of Au/ZnO multilayers

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Optoelectronic properties correlation to preparation of Au/La-oxide nanocomposite films

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