The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite

Habib, K. M. Masum; Sylvia, Somaia Sarwat; Ge, Supeng; Neupane, Mahesh R.; Lake, Roger K.

doi:10.1063/1.4841415

Cited by 29 publications

(20 citation statements)

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“…The effect of misorientation on the the interlayer resistivity of the electrons at K is similar to the effect of misorientation on the interlayer resistivity of electrons and holes in bilayer graphene [40,46,47]. The electron resistivity increases exponentially with the size of the supercell lattice constant, although the increase in MoS 2 is orders of magnitude less than the increase in bilayer graphene (compare Fig.…”

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confidence: 62%

Interlayer resistance of misoriented MoS₂

Zhou

Wickramaratne

et al. 2017

Phys. Chem. Chem. Phys.

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Interlayer misorientation in transition metal dichalcogenides alters the interlayer distance, the electronic bandstructure, and the vibrational modes, but, its effect on the interlayer resistance is not known. This work analyzes the coherent interlayer resistance of misoriented 2H-MoS2 for low energy electrons and holes as a function of the misorientation angle. The electronic interlayer resistance monotonically increases with the supercell lattice constant by several orders of magnitude similar to that of misoriented bilayer graphene. The large hole coupling gives low interlayer hole resistance that weakly depends on the misorientation angle. Interlayer rotation between an n-type region and a p-type region will suppress the electron current with little effect on the hole current. We estimate numerical bounds and explain the results in terms of the orbital composition of the bands at high symmetry points. Density functional theory calculations provide the interlayer coupling used in both a tunneling Hamiltonian and a non-equilibrium Green function calculation of the resistivity.Introduction: There is tremondous interest in multilayer and heterostructure stacks of transition metal dichalcogenides (TMDs) . They exhibit strong spin orbit coupling and non-trivial topology [3][4][5] [14,17,20], and rectifying pn junctions [7,14,20]. Multilayer and heterostructure growth with stacking control have been demonstrated [20][21][22][23]. Recent reviews provide an overview of the state of the art [24,[27][28][29].For TMD misoriented bilayers, both experiments and simulations show that the interlayer coupling and the interlayer distance are sensitive to the rotation angle, and that the sensitivity of the coupling is very different for different valleys [11-13, 16, 25]. A small rotation angle in hetero-bilayers alters the inter-layer exciton dynamics [30,31]. While the effects of misorientation on the geometry, electronic bandstructure, and vibrational modes of bilayer TMDs have received significant attention, the effect of misorientation on the interlayer resistivity of TMDs has not yet been studied. Recent work considered the effect of misorientation on the in-plane transport [32]. In this work, we theoretically determine the coherent electron and hole interlayer (vertical) conductance of a misoriented MoS 2 interface as illustrated in Fig. 1(a).In MoS 2 bilayers, the low-energy electron transport takes place at the K valley, and the low-energy hole transport takes place at the Γ valley. This results in an extremely asymmetric response of the electron and

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confidence: 62%

Interlayer resistance of misoriented MoS₂

Zhou

Wickramaratne

et al. 2017

Phys. Chem. Chem. Phys.

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“…The conductance between neighbor graphene layers has been addressed in a number of works [7][8][9][10]. The calculations show that the electronic structure of twisted bilayer graphene strongly depends on the twist angle [8].…”

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confidence: 99%

Tunneling conductance of telescopic contacts between graphene layers with and without dielectric spacer

Lebedeva

Popov

Knizhnik

et al. 2015

Computational Materials Science

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“…[1,32,110] Concerning possible misorientation within the graphene bilayers themselves, this is known experimentally not to occur for the devices of Fallahazad et al [33] An additional source of misorientation in the device would be that between the graphene bilayers and the h-BN layers of the tunnel barrier. We have not investigated this e ect in detail, although referring to prior work for twisted BLG, [145,146] it appears that such an e ect would give rise to a reduced transmission current through the entire heterostructure. Indeed, for the case of tunneling between MLG layers separated by h-BN, computed tunnel currents agree in detail with experiment, except that the theory is a factor of 10 3 to 10 4 too large.…”

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confidence: 99%

Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics

Barrera¹

2017

Springer Theses

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The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite

Abstract: Rotational spectra and temperature evaluation of C 2 molecules produced by pulsed laser irradiation to a graphite-water interface

Cited by 29 publications

References 37 publications

Interlayer resistance of misoriented MoS₂

Interlayer resistance of misoriented MoS₂

Tunneling conductance of telescopic contacts between graphene layers with and without dielectric spacer

Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics

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The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite

Abstract: Rotational spectra and temperature evaluation of C 2 molecules produced by pulsed laser irradiation to a graphite-water interface

Cited by 29 publications

References 37 publications

Interlayer resistance of misoriented MoS2

Interlayer resistance of misoriented MoS2

Tunneling conductance of telescopic contacts between graphene layers with and without dielectric spacer

Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics

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Product

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Interlayer resistance of misoriented MoS₂

Interlayer resistance of misoriented MoS₂