The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling

Liu, W.; Khatibzadeh, A.

doi:10.1109/16.324577

Cited by 86 publications

(29 citation statements)

References 21 publications

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“…As a result, the V BE -T B curve coincides with the V BEj -T j one, and ϕ can be obtained from its slope. By repeating the extraction procedure for various I E values, it was found that ϕ logarithmically depends on I E (almost equal to the II-free I C ), as already found for GaAs [11] and Si [12] bipolar transistors, as well as for SiGe:C devices fabricated by STMicroelectronics [8]. This dependence can be described by the following relationship:…”

Section: Thermometer Calibrationmentioning

confidence: 85%

Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2014

J. Phys.: Conf. Ser.

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Abstract. An extensive on-wafer experimental campaign is performed to extract the thermal resistance of state-of-the-art toward-THz silicon germanium bipolar transistors designed and developed within the European DOTFIVE project. The dependence of this critical parameter on scaling, as well as on the emitter layout, is carefully evaluated, and the resulting junction temperatures are determined. IntroductionSilicon germanium (SiGe) bipolar technology is increasingly adopted in a large variety of mm-wave and near-THz applications, like high-bandwidth communications, optical transmission, medical equipments, and automotive radars. An important contribution to this trend in the European scenario has been provided by the recently-ended DOTFIVE project [1] aimed at demonstrating heterojunction bipolar transistors (HBTs) with maximum oscillation frequency f max =0.5 THz [2]-[4], which the newborn DOTSEVEN [5] is expected to boost to 0.7 THz. The need for improving the performance of SiGe transistors has motivated a constant technological effort to allow aggressive lateral and vertical scaling. However, this is leading to unsustainable thermal issues induced by (i) the increase in current (and power) density, as clearly stated in a comprehensive review paper [6], and (ii) the reduction of the spacing between the intrinsic region and shallow/deep trenches filled with low thermal conductivity materials [7], for which the thermal resistances of single-finger transistors have been pushed into the thousands of K/W [8], [9]. This paper contributes to deepen the understanding of the scaling impact on the self-heating (SH) in SiGe:C HBTs by means of simple DC measurements carried out on state-of-the-art devices realized in the DOTFIVE framework.

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Section: Thermometer Calibrationmentioning

confidence: 85%

Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs

d’Alessandro

Sasso

Rinaldi

et al. 2014

J. Phys.: Conf. Ser.

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“…The J A normally consists of the J dA , and the J gA [1]. J dA has been derived from the forward I-V characteristic by taking the ideality factor (m) into account [8].…”

Section: Resultsmentioning

confidence: 99%

“…In order to examine the thermal stability, V be regression characteristics of ELB HBTs were measured, which is alternative to collapse loci and S-factor loci [1]. We applied the Vce device as inputs and measured I c and V be as I b increased, then obtained points, at the dots in Fig.…”

Section: Device Characteristicsmentioning

confidence: 99%

“…As in Si BJT, it exhibits thermal instability-related failures when operated under large dc or RF drive conditions [1]- [3]. This instability is due to the negative temperature coefficient of emitter-base turn-on voltages and the strong electrothermal positive feedback with high thermal resistance.…”

Section: Introductionmentioning

confidence: 99%

“…Recently, renewed interest has led to a further refinement of junction-based techniques [1], enabling separation of the different geometrical current components. These can be split up further into physical components, i.e., a generation (J gA ), and a diffusion (J dA ) current density in the case of area leakage current density (JA), from which, respectively, the generation (g) and recombination lifetime ( r ), can be derived.…”

Section: Introductionmentioning

confidence: 99%

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Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Jeon

Park

Hong

2001

IEEE Trans. Electron Devices

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Abstract-A InGaP/GaAs heterojunction bipolar transistor structure is proposed in which the base epi-layer underneath the extended ledge works as a base ballast resistor. The structure eliminates the critical alignment for a passivation ledge formation as well as additional process steps for external base ballast resistor. Both ballasted and unballasted devices were fabricated and compared. Small signal equivalent circuit gives us the magnitude of the effective ballast resistance. The thermal characteristics, including gain-collapsed -and regression curve are shown and modeled. The temperature dependency of base sheet resistance and its influence on the device performance are also discussed.

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Gallium Arsenide

2009

Esd

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The collapse of current gain in multi-finger heterojunction bipolar transistors: its substrate temperature dependence, instability criteria, and modeling

Cited by 86 publications

References 21 publications

Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs

Scaling influence on the thermal behavior of toward-THz SiGe:C HBTs

Thermal characteristics of InGaP/GaAs HBT ballasted with extended ledge

Gallium Arsenide

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