The combination of silicon nitride and aluminum anodization for semiconductor device passivation

Dell'Oca, C. J.; Barry, M. L.

doi:10.1016/0038-1101(72)90009-3

Cited by 11 publications

(7 citation statements)

References 4 publications

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“…Electrical contact to the silicon was made using mercury through a window cut in the backside oxide and was facilitated by an "O" ring vacuum chuck (2). The chuck was rigidly attached to a ground glass joint through which a glass tube facilitated both vacuum and electrical connection to the chuck.…”

Section: Methodsmentioning

confidence: 99%

“…Only a limited number of studies (1-4) have been reported on the electrical conductivity of CaO-doped nonstoichiometric cerium dioxide. Kevane et al (2) measured the electrical conductivity as a function of temperature (250~176 oxygen pressure (1-10 -4 atm), and CaO content (0.03-0.86% Ca). They reported mixed conduction, electronic and ionic.…”

Section: Introductionmentioning

confidence: 99%

“…One direct application of silicon nitride anodization has been to silicon bipolar transistors where silicon nitride is added to the existing thermally grown silicon dioxide passivation to provide protection from ionic contaminants. Here, the anodization was used to open windows in the silicon nitride to facilitate electrical contact to the active device area (2).…”

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confidence: 99%

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Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride

Dell'Oca

1973

J. Electrochem. Soc.

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The anodization of silicon nitride films on silicon has been characterized using ellipsometry. Calculations made indicate that the sensitivity of el]ipsometry to the anodization depends on the initial silicon nitride thickness. Ellipsometry data obtained during stepwise anodization are consistent with a model of two layers on silicon where the anodic oxide layer grows at the expense of the silicon nitride. The thickness ratio of oxide produced to silicon nitride used falls within ___0.25 of the theoretically expected value, 1.81, and depends to some extent on anodization conditions. The refractive index and growth (log10 J vs. E) properties of the oxide are similar to those of anodic oxides of silicon. Stepwise etchback studies on the oxide give results wh/ch are consistent with the anodization data and which indicate an abrupt silicon nitride-anodic oxide interface.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride

Dell'Oca

1973

J. Electrochem. Soc.

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“…These benefits include reduced effects of ion motion on the surface (273,275,280), lower susceptibility to metal corrosion (215,275), decreased susceptibility of metal stripes to electromigration failure (31,297,32,81), improved stability and reliability of thin-film resistors (144,342,234), and alkali-gettering capability in the case of phosphosilicate glasses (PSG). Anodic A12Os has also been reported to reduce susceptibility of A1 metallization to electromigration (180,77,178,263,81).…”

Section: Table II Stress In Low-temperature Deposited Passivation Lay...mentioning

confidence: 99%

“…With unsealed oxide edges, lateral migration of alkali is possible, and has been shown to adversely affect silicon device reliability (208). While the effects of alkali ions on stability of threshold voltage of MOS devices have been the subject of many studies, it has also been clearly established that alkali ions can adversely affect bipolar devices (279,310,208,195,77).…”

Section: Alkali Barrier Layersmentioning

confidence: 99%

Passivation Coatings on Silicon Devices

Schnable

Kern

Comizzoli

1975

J. Electrochem. Soc.

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Passivation coatings are widely used to improve the performance and reliability of silicon devices of various types, ranging from discrete mesa‐type diodes and transistors to complex planar silicon integrated circuits, and including both hermetic and plastic‐encapsulated devices. This paper reviews the materials and techniques used to apply passivation coatings to completed silicon devices. Principal production techniques used in passivation of silicon devices include thermal oxidation, high‐temperature diffusion, high‐temperature chemical vapor deposition of Si3N4 or Al2O3 , low‐temperature chemical vapor deposition of glasslike SiO2 or phosphosilicate layers (deposited at approximately 400°C), rf sputtering of SiO2 , mechanical deposition of glass frit layers which are subsequently fused, and application of organic polymer films.The effects of passivation layers on silicon device reliability are discussed, and the interrelationships among the silicon device, the passivation layer or layers used and the final encapsulation are indicated. Pertinent references on passivation and on related topics are cited in the text.

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Hydrogen content of amorphous PECVD SiNx:H films by infrared spectroscopy and hydrogen forward scattering results

Morello¹

1995

Journal of Non-Crystalline Solids

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The combination of silicon nitride and aluminum anodization for semiconductor device passivation

Cited by 11 publications

References 4 publications

Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride

Properties of Anodic Oxide Films Formed in the Anodization of Silicon Nitride

Passivation Coatings on Silicon Devices

Hydrogen content of amorphous PECVD SiNx:H films by infrared spectroscopy and hydrogen forward scattering results

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