The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Stuchlík, J.; Stuchlíková, The Ha; Remeš, Z.; Purkrt, A.; Fajgar, R.; Koštejn, M.; Zhuravlev, J. K. Kupčík; Sveshnikova, L.; Galkin, K. N.; Galkin, N. G.

doi:10.1166/asem.2015.1689

Cited by 7 publications

(5 citation statements)

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“…The nonlinear fitting of the implicit function

I = I (U, I)

was carried out via the Wolfram Mathematica software. The generation–recombination model with n = 2 fits the measured data well for low values of current densities at voltages U < 0.6 V. The forward current densities at voltages U > 0.6 V are dominated by effects not included in Equation but at U > 2 V, they asymptotically approach the data for high forward current densities where the series resistance R s dominates current–voltage characteristics . We attribute the relatively high R s to the resistivity of the B‐NCD electrode.…”

Section: Resultsmentioning

confidence: 65%

“…Here, q = 1.602 × 10 −19 C is the elementary charge, k B = 1.381 × 10 −23 JK −1 the Boltzmann constant, T = 300 K, n an ideality factor , and A a contact area . The absolute value of the dark current density of the selected diode recalculated on the diode area as a function of the voltage U is shown in Figure A, together with the fitted curve followed from Equation .…”

Section: Resultsmentioning

confidence: 99%

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Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Remeš

Stuchlı́k

Dragounová

et al. 2019

Physica Status Solidi (a)

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Hydrogenated amorphous substoichiometric silicon carbide (a-Si 1Àx C x :H, x < 0,1) thin films and diodes with low carbon content are prepared from a mixture of H 2 , SiH 4 , and CH 4 by plasma-enhanced chemical vapor deposition at a relatively high temperature of 400 C on semi-transparent boron-doped nanocrystalline diamond (B-NCD) electrodes with an underlying Ti grid. Vibration spectra indicate that CH 4 prevents Si crystallization at elevated deposition temperatures and confirm an increasing carbon content up to x ¼ 0.1 for samples grown with SiH 4 /CH 4 flows up to 1:3. Dark current-voltage characteristics of B-NCD/a-Si 1Àx C x :H diodes show a rectifying ratio of about four orders at AE1 V. However, under white light illumination, an energy conversion efficiency of 4% is limited by a high serial resistivity of the B-NCD electrode and S-shaped photocurrent near the open-circuit voltage.

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“…The nonlinear fitting of the implicit function

I = I (U, I)

Section: Resultsmentioning

confidence: 65%

Section: Resultsmentioning

confidence: 99%

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Remeš

Stuchlı́k

Dragounová

et al. 2019

Physica Status Solidi (a)

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“…Another question is the problem of convenient light sources for all silicon photonic . Our effort in previous years has been focused on the development of deposition systems which allow in situ deposition of amorphous or microcrystalline Si:H (a‐Si:H or μc‐Si:H) thin films with embedded nanoparticles (NPs) . The fundamental problem in this method is the relatively low temperature, i.e., about 220 °C, required for device quality a‐Si:H thin films during the PECVD process.…”

Section: Introductionmentioning

confidence: 99%

“…[3] Our effort in previous years has been focused on the development of deposition systems which allow in situ deposition of amorphous or microcrystalline Si:H (a-Si:H or μc-Si:H) thin films with embedded nanoparticles (NPs). [4][5][6] The fundamental problem in this method is the relatively low temperature, i.e., about 220 C, required for device quality a-Si:H thin films during the PECVD process. The bandgap of a-Si:H is narrow, and therefore we have tested semiconductor NPs whose bandgap is limited to the bandgap of a-Si:H. The deposition temperature 220 C is also too low for formation of crystalline NPs.…”

Section: Introductionmentioning

confidence: 99%

High‐Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon‐Carbon Alloys and Boron‐Doped Diamond Thin Films

Stuchlı́k

Remeš

Taylor

et al. 2020

Physica Status Solidi (b)

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Amorphous SiC:H (a‐SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron‐doped diamond‐coated fused silica substrates by plasma‐enhanced chemical vapor deposition. The boron‐doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin‐film structures based on P‐type, Intrinsic and N‐type a‐SiC:H thin films, shortly a‐SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine‐doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature‐resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

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“…Another disadvantage of the vacuum process interruption was the oxidation or contamination of the surface by organic residue when exposed to air. Therefore, we have switched to the insitu techniques such as reactive deposition epitaxy (RDE) [4], laser ablation [5] and the magnetron sputtering followed by plasma treatment [6]. The in-situ formation of silicide NPs by RDE and laser ablation was confirmed by the Auger electron spectroscopy (AES) and electron energy loss spectroscopies (EELS) and by the optical absorbance and Raman spectroscopy [7].…”

Section: Introductionmentioning

confidence: 99%

Near Infrared Photoluminescence of the Hydrogenated Amorphous Silicon Thin Films With in-Situ Embedded Silicon Nanoparticles

Remeš¹

2017

Ceramics - Silikaty

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The intrinsic hydrogenated silicone layers with embedded silicon nanoparticles were grown in-situ at 250°C on glass substrates by the radio frequency plasma enhanced chemical vapor deposition (CVD) from silane highly diluted in hydrogen. The changes in the optical absorption coefficient were detected by the photothemal deflection spectroscopy (PDS). The transition from amorphous to crystalline phase for samples deposited at 5 -6 % silane concentration correlates to the crystalline volume fraction about 50 % as detected by Raman spectroscopy and the high resolution transmission electron microscopy (HRTEM). The room temperature photo-luminescence increases significantly with increased crystallinity volume fraction but diminishes abruptly when crystallinity volume fraction exceeds above 80 %. The photoluminescence intensity strongly correlates with the presence of isolated silicon nanoparticles in the mixed amorphous and crystalline phase. The strongest photoluminescence was found in the sample with mixed phase of amorphous matrix and isolated silicon nanoparticles and the crystalline volume fraction about 50 %.

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The Combined Technological Methods for Deposition of Si:H Thin Films and Structures with Embedded NPs

Cited by 7 publications

References 0 publications

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

Optoelectronic Properties of Hydrogenated Amorphous Substoichiometric Silicon Carbide with Low Carbon Content Deposited on Semi‐Transparent Boron‐Doped Diamond

High‐Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon‐Carbon Alloys and Boron‐Doped Diamond Thin Films

Near Infrared Photoluminescence of the Hydrogenated Amorphous Silicon Thin Films With in-Situ Embedded Silicon Nanoparticles

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