2020
DOI: 10.37936/ecti-cit.2020142.123097
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The Completed Probabilistic Modelling of Nanometer MIFGMOSFET

Abstract: A completed model of the probabilistic distribution of the drain current’s random variation of the nanometer multiple input floating gate MOSFET (MIFGMOSFET) is proposed in this work. The modelling process has taken the dominant physical level causes of the drain current’s variations into account. Unlike its predecessor, the proposed model considers both N-type and P-type nanometer MIFGMOSFET. Moreover, the formerly neglected parasitic coupling capacitances have also been taken into account. The obtained model… Show more

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