The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier

Wang, Weilin; Peng, Kuo-Tzu; Kuo, Hsien-Chang; Yeh, Ming–Kung; Chien, Hung-Ju; Ying, Tzung-Hua

doi:10.1016/j.mssp.2014.08.035

Materials Science in Semiconductor Processing

2014

DOI: 10.1016/j.mssp.2014.08.035

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The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier

Weilin Wang

Kuo-Tzu Peng

Hsien-Chang Kuo

et al.

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Cited by 8 publications

(1 citation statement)

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“…Hence, the existence of TaN/Ta diffusion barrier affects the total resistance of overall Cu interconnects greatly. 4 As for the implementation of the TaN/Ta barrier, a so-called punch through process, where the TaN/Ta barrier is first deposited on Cu and followed by the bombardment of this TaN/Ta barrier by Ar plasma to leave a thin Ta layer on top of Cu, is widely used for Cu interconnects. However, such a film stack is usually confronted with a serious problem of EM failure.…”

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confidence: 99%

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Sun

Lv²,

Li³

et al. 2019

ECS J. Solid State Sci. Technol.

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The effects of Ar Plasma Treatment (APT) on the properties of Ta i.e. the transformation from high resistivity β-Ta to low resistivity α-Ta are manifested in this work. It is demonstrated that APT indeed promotes the formation of low resistivity α-Ta, as confirmed by the lower sheet resistance and more α-Ta in XRD patterns compared to the case without APT. XPS results reveal that the compositions of interfacial thin layer between Ta and TaN are different in two cases. The precession electron diffraction (PED) is used to determine the degree of crystalline in Ta. It is indicated directly that both α-Ta and β-Ta exist in the Ta layer. The Kelvin Resistor Chain (KRC) and Chain Contact Resistance (Chain RC) test results show that APT could also lead to remarkably reduced contact resistance.

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mentioning

confidence: 99%

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Sun

Lv²,

Li³

et al. 2019

ECS J. Solid State Sci. Technol.

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Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system

Chen

Huo

Dai

et al. 2016

Phys. Status Solidi A

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The diffusion barrier performance of an ultrathin amorphous Al–Ni (a‐Al–Ni) film as barrier layer in a sandwiched scheme Cu/barrier/Si and Cu/barrier/SiO2/Si is investigated. Microstructures, electrical properties, surface morphologies, and interfaces for the samples annealed at various temperatures are measured using X‐ray diffraction (XRD), sheet resistance measurements, atomic force microscopy (AFM), and transmission electron microscopy (TEM). The results present 4.5‐nm‐thick a‐Al–Ni can achieve good thermal stability up to 750 °C. Cu silicide cannot be observed in XRD data up to 800 °C. However, the abrupt increase in sheet resistance value and the appearing island‐like grains in AFM images for the sample annealed at 800 °C indicate the failure of the barrier structure. The failure mechanism of barrier layer is discussed and can be attributed to the dewetting of Cu film along grain boundary grooving. The amorphization of the barrier layer and clear interfaces with its adjacent layers are further authenticated by high resolution TEM. It is also found that the growth orientation and surface morphology of Cu film are related to the substrates (monocrystalline Si and amorphous SiO2) under the barrier layer.

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Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

Prahoveanu

Laversenne

Vaulx

et al. 2016

Journal of Elec Materi

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International audienceThe performance of thermoelectric (TE) modules is governed not only by the thermoelectric materials whose properties are capitalized, but also on the quality of the electrical contacts which are ubiquitous in the design of the device. To ensure the necessary stability of the interfaces between the TE materials and the electrodes, diffusion barriers are generally used. In this study, attempts are presented in finding diffusion barriers that would be suitable for Mg2(Si,Ge) TE materials. These involved the deposition by microwave plasma-assisted co-sputtering of intermediate gradient layers starting from Mg and Si, ending up with a Ni layer, or the deposition of metallic layers (Ti, Cr, W and Ta). The effectiveness of the deposited layers as diffusion barriers is assessed after the legs were subjected to a brazing process, with the results favoring the use of gradient layers with a thick Ni layer and metallic layers based on Ta and Cr, despite some adherence issues for the latter

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The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier

Cited by 8 publications

References 13 publications

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system

Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

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The contact resistance reduction of Cu interconnects by optimizing the crystal behavior of Ta/TaN diffusion barrier

Cited by 8 publications

References 13 publications

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Effects of Ar Plasma Treatment on the Properties of TaN/Ta Barrier for Copper Interconnects in Advanced 3D NAND Memory

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO 2 contact system

Investigation of Diffusion Barrier Layers for Bi-Doped Mg2(Si,Ge) Thermoelectric Legs

Contact Info

Product

Resources

About

Barrier properties of ultrathin amorphous Al–Ni alloy film in Cu/Si or Cu/SiO ₂ contact system