2019
DOI: 10.1016/j.spmi.2019.106159
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The contribution of Cr(III)-doping on the modulation of magnetic and luminescence properties of GaN nanowires

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Cited by 11 publications
(1 citation statement)
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“…The 2Cr Ga –V N 1– + h → 2Cr Ga –V N 0 hole capture transition of 2Cr Ga –V N has a ZPL of 2.46 eV, where the D band observed by Zimmerman et al also shows a broad peak. PL studies by Farooq et al 77 on Cr-doped GaN further strengthen our argument because they observed an increase in the PL intensity of a defect-related broadband ranging from 550 to 700 nm upon Cr doping that was absent in pure GaN, which was grown from carbon-free precursors.…”
Section: Resultssupporting
confidence: 82%
“…The 2Cr Ga –V N 1– + h → 2Cr Ga –V N 0 hole capture transition of 2Cr Ga –V N has a ZPL of 2.46 eV, where the D band observed by Zimmerman et al also shows a broad peak. PL studies by Farooq et al 77 on Cr-doped GaN further strengthen our argument because they observed an increase in the PL intensity of a defect-related broadband ranging from 550 to 700 nm upon Cr doping that was absent in pure GaN, which was grown from carbon-free precursors.…”
Section: Resultssupporting
confidence: 82%