The Copper Oxide Rectifier

Brattain, W. H.

doi:10.1103/revmodphys.23.203

Cited by 113 publications

(53 citation statements)

References 15 publications

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“…Electrical and optical properties of different Cu 2 O/metal interfaces have been studied in detail in the past [38][39][40]. Cu 2 O forms a Schottky barrier when it is in contact with metals such as Cu [41]. Ultrafast excitation of a Schottky interface can lead to the formation of transient photocurrents emitting pulses of THz light.…”

Section: Terahertz Emission Mechanismmentioning

confidence: 99%

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Ramakrishnan¹,

Ramanandan²,

Adam³

et al. 2013

Opt. Express

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Abstract:We report on the surprisingly strong, broadband emission of coherent terahertz pulses from ultrathin layers of semiconductors such as amorphous silicon, germanium and polycrystalline cuprous oxide deposited on gold, upon illumination with femtosecond laser pulses. The strength of the emission is surprising because the materials are considered to be bad (amorphous silicon and polycrystalline cuprous oxide) or fair (amorphous germanium) terahertz emitters at best. We show that the strength of the emission is partly explained by cavity-enhanced optical absorption. This forces most of the light to be absorbed in the depletion region of the semiconductor/metal interface where terahertz generation occurs. For an excitation wavelength of 800 nm, the strongest terahertz emission is found for a 25 nm thick layer of amorphous germanium, a 40 nm thick layer of amorphous silicon and a 420 nm thick layer of cuprous oxide, all on gold. The emission from cuprous oxide is similar in strength to that obtained with optical rectification from a 300 μm thick gallium phosphide crystal. As an application of our findings we demonstrate how such thin films can be used to turn standard optical components, such as paraboloidal mirrors, into self-focusing terahertz emitters.

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Section: Terahertz Emission Mechanismmentioning

confidence: 99%

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Ramakrishnan¹,

Ramanandan²,

Adam³

et al. 2013

Opt. Express

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show abstract

“…… The main impurity centers, acceptors in this case, are probably vacant copper ion lattice sites." [1]. Hardly anything has changed concerning the validity of this statement, nowadays it is well established that Cu 2 O is a natural p-type semiconductor, whose carrier concentration depends on the amount of cation deficiency (non-stoichiometry).…”

Section: Introductionmentioning

confidence: 99%

Breaking of Raman selection rules in Cu₂O by intrinsic point defects

2014

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The semiconductor cuprous oxide crystallizes in a simple cubic structure and reveals outstanding characteristics: Independent of the method and conditions of the synthesis of crystalline Cu 2 O its Raman spectra are dominated by infrared active, silent, and defect modes rather than by Raman allowed phonon modes only. A detailed group theoretical analysis demonstrates that point defects reduce the local symmetry, lift the Raman selection rules, and thus diminish the distinction between Raman allowed and Raman forbidden lattice vibrations. Of all intrinsic defects only the presence of the copper vacancy in the so called split configuration introduces possible Raman activity for all Cu 2 O extended phonon modes observed in experiment.

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“…Lars Olai Grondahl published a review on cuprous oxide in 1931 122 while Brittain, one of the three inventors of transistor, also published a review on cuprous oxide in 1951. 123 Cu/CuO 2 rectifiers are no longer popular. However, research papers on cuprous oxide are still published in the second half of the 20th century 124 and even in the 21st century.…”

Section: Semiconductor Science and Technology In The 21 St Centurymentioning

confidence: 99%

Introduction to the History of Semiconductors

Lau¹

2017

ULSI Front-End Technology

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The Copper Oxide Rectifier

Cited by 113 publications

References 15 publications

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Breaking of Raman selection rules in Cu₂O by intrinsic point defects

Introduction to the History of Semiconductors

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The Copper Oxide Rectifier

Cited by 113 publications

References 15 publications

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Enhanced terahertz emission by coherent optical absorption in ultrathin semiconductor films on metals

Breaking of Raman selection rules in Cu2O by intrinsic point defects

Introduction to the History of Semiconductors

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Product

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About

Breaking of Raman selection rules in Cu₂O by intrinsic point defects