The crystal growth and characterization of CeT2Si2 ternary intermetallics (T = Ni, Pd, Pt)

Menovsky, A.A.; Snel, C.E.; Gortenmulder, T.J.; Palstra, Thomas

doi:10.1016/0022-0248(86)90112-0

Cited by 21 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The determined room-temperature tetragonal lattice parameters of CePt 2 Si 2 (a = (4.253± 0.002) × 10 −1 nm, c = (9.793 ± 0.004) × 10 −1 nm) and of CeNi 2 Si 2 (a = (4.037 ± 0.001) × 10 −1 nm, c = (9.570 ± 0.002) × 10 −1 nm) are in agreement with values from the literature for the CePt 2 Si 2 [1][2][3][4] and CeNi 2 Si 2 [4,12,13] compounds.…”

Section: X-ray Diffraction Analysissupporting

confidence: 90%

“…The low-temperature properties of CePt 2 Si 2 have attracted many researchers since it was proclaimed by Gignoux et al [1] as a Kondo lattice compound. CePt 2 Si 2 crystallizes in a tetragonal structure, but some differences in interpretation exist regarding its appropriate space group, which is indicated to be the P4/nmm CaBe 2 Ge 2 type [1][2][3][4] or a new CePt 2 Si 2 type structure [5]. The electrical resistivity ρ(T ) of polycrystalline CePt 2 Si 2 shows a Kondo-like logarithmic increase up to a maximum at T max = 76 K upon cooling and then a steep decrease towards low temperatures [1].…”

Section: Introductionmentioning

confidence: 99%

“…The other end compound CeNi 2 Si 2 also has a tetragonal structure but of a different type than CePt 2 Si 2 , viz it has a ThCr 2 Si 2 -type structure [4,12,13]. Various studies [14][15][16][17][18] including core-level photoemission spectroscopy [18] and L III absorption spectroscopy measurements [14] indicate that CeNi 2 Si 2 is a IV compound.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Ragel¹,

Plessis²

2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Electrical resistivity ρ(T ) measurements on polycrystalline samples of the Ce(Pt 1−x Ni x ) 2 Si 2 system exhibit dense Kondo behaviour for alloys with 0 x 0.6. The temperature at which a maximum appears in ρ(T ) shifts from T max = 65 K for x = 0 to T max = 290 K for x = 0.6 as the system evolves towards the intermediate-valence regime for the CeNi 2 Si 2 compound. At low temperatures the Ce(Pt 1−x Ni x ) 2 Si 2 alloys show a Fermi liquid T 2 contribution to ρ(T ) below the coherence temperature T coh . It is observed that T coh ≈ T K /(2 j +1), with a transition that takes place from a dense Kondo regime of. T K (∝T max ) and T CF denote the Kondo and crystalline electric field splitting, E F and E R are the Fermi and the Abrikosov-Suhl resonance energies and j denotes the total angular momentum. An electronic Grüneisen parameter value = −∂(ln T max )/∂(ln V ) of 19 has been obtained for the alloy system which is in reasonable agreement with = 28 found from pressure studies on CePt 2 Si 2 . It is argued that volume effects are mainly responsible for the hybridization in the Ce(Pt 1−x Ni x ) 2 Si 2 system and application of the compressible Kondo lattice model to T max data yields |J N(E F )| = 0.309 ± 0.008, where J is the on-site exchange interaction between conduction electrons and the localized 4f spin and N(E F ) is the density of states at E F .

show abstract

Section: X-ray Diffraction Analysissupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Ragel¹,

Plessis²

2004

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

show abstract

“…For our specimens, we find residual resistivity ratios RRR = ρ 300K /ρ 0 ≈ 30-120 for URu 2 Si 2 and 190 for ThRu 2 Si 2 . By comparison to as-cast URu 2 Si 2 specimens grown by the Czochralski technique-where RRR typically is near 10 [28,29]-the specimens produced by our technique are of good quality. Nonetheless, it is clear that so far this technique does not produce specimens with RRR as large as that available from conventional indium flux or CZO/SSE techniques, where RRRs approaching 220 and 1000, respectively, have been reported [5][6][7].…”

Section: Discussionmentioning

confidence: 93%

Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

et al. 2016

View full text Add to dashboard Cite

Abstract:We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu 2 Si 2 and its nonmagnetic analogue ThRu 2 Si 2 . Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios RRR = ρ 300K /ρ 0 as large as 116 and 187 for URu 2 Si 2 and ThRu 2 Si 2 , respectively.

show abstract

“…A crystal was slowly pulled from the melt by a pulling-up rod with a seed crystal. The pulling-up rate was 5 mm/h [8]. The crystal structure and the single phase nature were confirmed by X-ray powder diffraction.…”

Section: Methodsmentioning

confidence: 76%

Magnetic transitions on the pseudo-ternary compounds Ho_1-xY_xRh₂Si₂

Shigeoka

Fujiwara

Uwatoko

2017

J. Phys.: Conf. Ser.

View full text Add to dashboard Cite

The crystal growth and characterization of CeT2Si2 ternary intermetallics (T = Ni, Pd, Pt)

Cited by 21 publications

References 11 publications

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

Magnetic transitions on the pseudo-ternary compounds Ho_1-xY_xRh₂Si₂

Contact Info

Product

Resources

About

The crystal growth and characterization of CeT2Si2 ternary intermetallics (T = Ni, Pd, Pt)

Cited by 21 publications

References 11 publications

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt1 xNix)2Si2alloys

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt1 xNix)2Si2alloys

Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

Magnetic transitions on the pseudo-ternary compounds Ho1-xYxRh2Si2

Contact Info

Product

Resources

About

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Transition from dense Kondo to the intermediate-valence regime in the Ce (Pt_1 xNi_x)₂Si₂alloys

Magnetic transitions on the pseudo-ternary compounds Ho_1-xY_xRh₂Si₂