1994
DOI: 10.1246/bcsj.67.3000
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The Crystal Structure of cis-β-Λ-Carbonato(S,S-triethylenetetramine)cobalt(III) Perchlorate: Spontaneous Resolution and Determination of Absolute Configuration

Abstract: The single crystal of cis-β-Λ-S,S-[Co(CO3)(trien)](ClO4)·H2O (trien = triethylenetetramine) has spontaneously resolved from the aqueous solution of cis-α-[CoCl(NH3)(trien)](ClO4)2 containing hydrogencarbonate anion, whose crystal structure has been determined by X-ray diffraction method. The complex crystallizes in the monoclinic space group P21 with a = 7.410(1), b = 12.354(3), c = 8.676(1) Å, β = 108.88(1)°, and Z = 2. The final R and Rw values for the 3056 observed reflections with Io > 3σ(Io) are 0.… Show more

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Cited by 6 publications
(4 citation statements)
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“…Several other such sources are described in Masuda's thesis (1994). As pointed out by Masuda et al (1994), these observations lend support to theories that place the location of flare energy release high up in the corona. The power law hard X-ray spectra of the LT sources indicate that electron acceleration is indeed occurring at or near these locations.…”
Section: Introductionsupporting
confidence: 69%
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“…Several other such sources are described in Masuda's thesis (1994). As pointed out by Masuda et al (1994), these observations lend support to theories that place the location of flare energy release high up in the corona. The power law hard X-ray spectra of the LT sources indicate that electron acceleration is indeed occurring at or near these locations.…”
Section: Introductionsupporting
confidence: 69%
“…We have used Masuda's (1994) selection criteria (heliocentric longitude > 80 degrees, peak count rate > 10 counts per sec per subcollimator in the ∼ 33 − 53 keV range, i.e. the M2 channel).…”
Section: Data Analysis and Resultsmentioning
confidence: 99%
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“…Thin films of ZnO can be prepared by several growth techniques, including pulsed laser deposition [11,12] and radio-frequency magnetron sputtering [13,14]. However, the quality of ZnO films obtained by these methods depends on either a high growth temperature (350°C to 450°C) or a post-growth annealing process.…”
Section: Introductionmentioning
confidence: 99%