a b s t r a c tThe binary system Ni-P is one of the constituents of the ternary system Ni-P-Sn which provides the basic knowledge for understanding the interactions between Sn-based solders and common Ni(P) metallization. In this study a new version of the Ni-P phase diagram was established based on XRD, EPMA and DTA measurements. The present diagram differs in some important details from the literature version. For the phases Ni 5 P 2 high temperature (HT) and Ni 12 P 5 HT the existence of a considerable homogeneity range is proposed. In Ni 5 P 2 the transformation between HT and low temperature (LT) modification comprises a peritectic and a eutectoid reaction, whereas for the transition in Ni 12 P 5 two eutectoids are proposed. Unfortunately, the high temperature phases cannot be stabilized by quenching, so that all data have to rely on the results of thermal analyses. Furthermore, Ni 5 P 4 was found to be formed by a peritectic reaction, and a eutectic was observed between Ni 5 P 4 and NiP. The phase NiP 1.22 that had been reported in the literature could not be found at all. Although the experimental work was complicated by the high vapor pressure of phosphorus at P concentrations higher than 40 at.% (which caused the explosion of quartz tubes and prevented the preparation of equilibrium samples at higher temperatures), it could still be shown that the phase NiP 3 is probably stable down to room temperature in contrast to the literature reports.