Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP 3 and SnP 3 are restricted to the monolayer or bilayer, and SnP 3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP 3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP 3 monolayer has the "pudding-mold-type" valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal conductivity becomes larger at a tensile biaxial strain due to the increased maximum frequency of the acoustic phonon modes and the increased phonon group velocity, it is still low, only e.g. 3.1 Wm −1 K −1 at room temperature with the 6% tensile biaxial strain. Therefore, SnP 3 monolayer is a good thermoelectric material with low lattice thermal conductivity even at the 6% tensile strain, and the tensile strain is beneficial to the increase of the n-type Seebeck coefficient.