The Crystal Structures of SiP2, SiAs2, and GeP.

Wadsten, T.; Vikan, M.; Krohn, Christine E.; Nilsson, Åke; Theorell, Hugo; Blinc, R.; Paušak, S.; Ehrenberg, L.; Dumanović, J.

doi:10.3891/acta.chem.scand.21-0593

Cited by 116 publications

(98 citation statements)

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“…Wadsten [13] first determined the space group of orthorhombic SiP phase as Pnna, but in his later published paper [14] the space group of SiP was changed into Cmc2 1 (36), which is collected in the Pearson's database and cited in the review by Olesinski et al, [22] however, we failed to get the original paper. [14] For the SiP 2 phase two structures are reported, orthorhombic [15,16] and pyrite-type. [17,18] The pyrite-type SiP 2 essentially formed at higher pressure (about 10 bar) using halogens as transporting agents.…”

Section: Crystal Structure Of Solid Phasesmentioning

confidence: 99%

“…Table 1 [9][10][11][12][13][14][15][16][17][18] presents the crystallographic data of all accepted solid phases in the Si-P system. Phosphorus exhibits various solid allotropic forms, but for this thermodynamic description, we only choose the red phosphorus and white phosphorus (a-P) for which thermodynamic parameters are provided by Dinsdale [19] .…”

Section: Crystal Structure Of Solid Phasesmentioning

confidence: 99%

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Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System

Liang

Schmid–Fetzer

2013

J. Phase Equilib. Diffus.

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A Calphad assessment of the Si-P system is performed based on critical review of all available original experimental thermodynamic and phase equilibrium data. It is demonstrated that a simple disordered substitutional solution model is sufficient for the liquid phase and that previous assumptions of short-range ordering in the Si-P liquid phase may not be justified. Alternative model descriptions for the Gibbs energy of the (Si) solid solution phase were developed to reveal the consequences in describing the largely scattering solid solubility data of P in (Si). Two alternative sets of consistently calculated phase boundaries of the (Si) phase are shown. It is impossible to reconcile the only experimental (Si) solidus data with the solvus data from the same work.

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Section: Crystal Structure Of Solid Phasesmentioning

confidence: 99%

Section: Crystal Structure Of Solid Phasesmentioning

confidence: 99%

Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System

Liang

Schmid–Fetzer

2013

J. Phase Equilib. Diffus.

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“…The equilibrium phase diagrams assessed so far predict the existence of a limited number of stable compositions and polytypes [15]. Few more have been synthesised at high pressure (cubic GeP, cubic GeP 2 , rhombohedral GeP 3 [16,17]) or suggested to exist according to structural investigations, even though not present in the equilibrium phase diagram (orthorhombic SiP 2 [12] and cubic SiP 2 [18]). Recently, the phase diagram of the Si-P has been theoretically revisited under high pressure and suggested to be substantially different from that drawn under equilibrium conditions at ambient pressure [19].…”

Section: Introductionmentioning

confidence: 99%

“…Binary compounds of 1 Celine.Barreteau@unige.ch a group IV element (Si, Ge, Sn) and a group V pnictogens (P, As,) are also known to form layered structures in which 2D strongly covalent layers are stacked onto each other through weak van der Waals like bonds, as well as in TMDs. Silicon and germanium phosphides and arsenides have been reported since decades to crystallize in various layered structures with either orthorhombic (Cmc2 1 space group, SiP [11], Pbam space group, SiP 2 and GeAs 2 [12]) or monoclinic (C2/m space group, GeP, GeAs and SiAs [12,13,14]) symmetries. After the initial investigations of their crystal structures and phase equilibria, during the sixties and seventies, this family of compounds has been rather overlooked, and attracts today our interest as being a potential class of 2D materials, alternative to TMDs.…”

Section: Introductionmentioning

confidence: 99%

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Barreteau

Michon

Besnard

et al. 2016

Journal of Crystal Growth

145

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Silicon and Germanium monopnictides SiP, SiAs, GeP and GeAs form a family of 2D layered semiconductors. We have succeeded in growing bulk single crystals of these compounds by melt-growth under high pressure (0.5-1 GPa) in a cubic anvil hot press. Large (mm-size), shiny, micaceous crystals of GeP, GeAs and SiAs were obtained, and could be exfoliated into 2D flakes. Small and brittle crystals of SiP were yielded by this method. High-pressure sintered polycrystalline SiP and GeAs have also been successfully used as a precursor in the Chemical Vapor Transport growth of these crystals in the presence of I 2 as a transport agent. All compounds are found to crystallize in the expected layered structure and do not undergo any structural transition at low temperature, as shown by Raman spectroscopy down to T=5 K. All materials exhibit a semiconducting behavior. The electrical resistivity of GeP, GeAs and SiAs is found to depend on temperature following a 2D-Variable Range Hopping conduction mechanism. The availability of bulk crystals of these compounds opens new perspectives in the field of 2D semiconducting materials for device applications.

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“…Within each layer, Si-Si (Ge-Ge) pairs are surrounded by six P atoms forming a distorted trigonal antiprism. In the crystal structure of SiP 2 , which is isostructural to SiAs 2 and GeAs 2 , each Si atom is coordinated by four phosphorus atoms [187,188]. SiP or SiP 2 layers stack through lone-pair interactions between the P atoms that confine the layer.…”

Section: Tetrel (Si Ge Sn) Phosphidesmentioning

confidence: 99%

Emerging nanostructured electrode materials for water electrolysis and rechargeable beyond Li-ion batteries

Pomerantseva

Resini

Kovnir

et al. 2017

Advances in Physics: X

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This review describes recent advances in electrochemical water electrolysis and rechargeable beyond Li-ion battery research, two emergent and widely employed technologies playing important roles in clean energy production and storage. The principle components of these electrochemical processes are electrode materials, which are currently facing challenges in performance improvement, thus motivating the development of novel electrode materials. This development requires synergistic interactions between experimentalists and theorists with backgrounds in solid state chemistry, condensed matter physics, and materials science and engineering. In light of a large amount of literature covering the topic, we will focus this review on the seminal electrode materials that have been discovered in the last five years, such as transition metal chalcogenides, carbides, and phosphides, as well as 2D layered materials. Intensive cross-disciplinary research is also dedicated to nanostructuring and hybridization of the emerging electrode materials in order to maximize the efficiency and simultaneously to lower the cost of the processes. As the understanding of the nanoscale-related effects deepens, it opens important pathways to the discovery of further materials and their improvement.

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The Crystal Structures of SiP2, SiAs2, and GeP.

Cited by 116 publications

References 0 publications

Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System

Modeling of Thermodynamic Properties and Phase Equilibria of the Si-P System

High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors

Emerging nanostructured electrode materials for water electrolysis and rechargeable beyond Li-ion batteries

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