The crystallinity analysis of poly-Si film with different deposition sequences of aluminum and a-Si layers by aluminum induced crystallization method

Chu, Hsiao-Yeh; Chiang, Meng-Yi; Yiz, Longer; Zhou, Sheng-Hong

doi:10.1109/nems.2011.6017534

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2013

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“…The MIC of a-Si can occur through the diffusion of specifically selected metals, such as Al [5], Cu [6] and Ni [7] into the films. The aluminium-induced crystallization (AIC) process exhabits several interesting effects, as it acts as the p-type dopant for Si and it can reduce the crystallization temperature to below 450 o C [5]. However, despite numerous research efforts, the role of Al in the crystallization process is still unclear.…”

Section: Introductionmentioning

confidence: 99%

Aluminium Induced Crystallization of Amorphous Silicon via Solution Derived Catalyst

2013

AMM

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In this paper, aluminum induced crystallization (AIC) was studied by examining the effect of using solution derived AlCl3 catalyst. Such catalyst preparation method offers possibility of low-cost, non-vacuum solution process and allows examination of the role of alumina on the AIC process. The deposited AIC films were examined by using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Raman spectroscopy, X-ray diffraction (XRD) and four probe measurements. It was found that AIC process is highly dependent on annealing temperature and can occur at annealing temperatures above 500°C through Al2O3 formation. Based on the presented data, a possible growth model is proposed to clarify AIC mechanism.

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