The crystallisation of thin amorphous tantalum oxide films heated in air or vacuo, and the structure of the crystalline oxide

Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C

“…Therefore, the crystallization temperature of Ta205 film grown by reactive sputtering lies between 650~ and 7000C. The crystallization temperature obtained in this work is consistent with previous results (10,14) for anodically or thermally grown Ta205 film. It is concluded that the crystallization temperature of Ta205 film does not depend on the method by which the film is grown.…”

On the Superstructures of Ta2O5 and Nb2O5

“…Specimens of tantalum oxide of the same type have been examined previously by means of electron diffraction by Harvey and Wilman [6]; their diffraction patterns do not seem to be the same as the ones observed here. I n particular the large spacing was found t o be = 35 As), which is comparable to some of the long spacings observed in this work.…”

“…With the second procedure it is the hydrogen formation a t the interface metal oxide which causes the oxide t o become free from the metal. With this procedure clean large-area specimens can more easily be obtained (up t o 5 mm2) [6]. I n both cases the oxide films were carefully washed in distilled water before being transferred on nickel, copper, or platinum grids.…”

Room-temperature formation of tantalum oxide films by liquid phase deposition

“…This interfacial SiO 2 layer significantly affects the leakage current [27]. If the annealing temperature is increased beyond 400 8C, the literature reports that the deposited Ta 2 O 5 layer will crystallize [18,28,29], resulting in poor electrical properties which are due to the presence of grain boundaries. However, crystalline Ta 2 O 5 films annealed at higher temperatures have been shown to exhibit a dielectric constant that is higher than that of the amorphous Ta 2 O 5 [30,31].…”