The atomic layer deposition of Al 2 O 3 films on Si(100) and α-Cr 2 O 3 was studied. The films were grown via AlCl 3 -H 2 O, AlCl 3 -O 3 , Al(CH 3 ) 3 -H 2 O, and Al(CH 3 ) 3 -O 3 processes at 300−750 °C. The films deposited from AlCl 3 and H 2 O at temperatures ≥ 400 °C on α-Cr 2 O 3 contained the corundum phase of alumina (α-Al 2 O 3 ). The densities and refractive indices of the α-Al 2 O 3 films were close to the corresponding values of single-crystal α-Al 2 O 3 and exceeded markedly those of amorphous Al 2 O 3 . The α-Al 2 O 3 phase was also obtained in the films deposited at 450 °C on α-Cr 2 O 3 from AlCl 3 and O 3 and from Al(CH 3 ) 3 and H 2 O. However, the crystallinity, densities, and refractive indices of the latter films were lower than those of the films deposited at 450 °C on α-Cr 2 O 3 from AlCl 3 and H 2 O. Etching in hot (110 °C) 80% H 2 SO 4 was used to characterize the chemical resistance of the films in aggressive environments. The etching rate of α-Al 2 O 3 deposited at 450−750 °C was more than 1000 times lower than that of predominantly amorphous Al 2 O 3 , and also lower than those of the films that were grown on Si(100) at 750 °C and contained γ-Al 2 O 3 , δ-Al 2 O 3 , and/or θ-Al 2 O 3 .