The Cu photoluminescence defect and the early stages of Cu precipitation in Si

Vincent, T. M.; Estreicher, Stefan K.; Weber, Jens; Kolkovsky, Vl.; Yarykin, Nikolai

doi:10.1063/1.5140456

Cited by 6 publications

(5 citation statements)

References 66 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The spectrum was dominated by the peak at 105 K due to the

{Cu}_{normals}

second acceptor level. [ 4,12,13 ] (Hereafter, the DLTS peak positions are given for the rate window of

49 {normals}^{- 1}

.) The

{Cu}_{185}

and

{Cu}_{145}

peaks were formed in the near‐surface region due to acid chemical etching and ascribed earlier to Cu−H and Cu−H 2 complexes, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…[ 12 ] In the as‐received samples, almost no deep levels were revealed in the upper half of the bandgap, as all

{Cu}_{normals}

atoms were consumed to form

{Cu}_{PL}

complexes with a single level close to the valence band. [ 4 ] Therefore, all samples were first subjected to a 350 °C annealing for 30–40 min, which was terminated by fast cooling in air. This treatment destroyed the

{Cu}_{PL}

complexes, and the second acceptor level of

{Cu}_{normals}

E_{normalc} -

0.16 eV [ 13,14 ] was detected in concentration of

(7 - 10) \times 10^{13} {cm}^{- 3}

.…”

Section: Methodsmentioning

confidence: 99%

“…Their transformation to substitutional atoms (Cu s and Ni s ) with sets of deep levels is governed by the presence of available vacancies. [4] In case of copper, the Cu i ! Cu s transformation was demonstrated to proceed at room temperature due to vacancies created by irradiation with energetic particles.…”

Section: Introductionmentioning

confidence: 99%

“…Their transformation to substitutional atoms (

{Cu}_{normals}

and

{Ni}_{normals}

) with sets of deep levels is governed by the presence of available vacancies. [ 4 ] In case of copper, the

{Cu}_{normali}

\to

{Cu}_{normals}

transformation was demonstrated to proceed at room temperature due to vacancies created by irradiation with energetic particles. [ 5,6 ] In this work, we consider the situation when

{Ni}_{normali}

is introduced at near room temperatures into the crystals, where vacancies were already occupied by copper (

{Cu}_{normals}

).…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Electrical Activation of Interstitial Ni in Cu‐Doped Si

Yarykin

Weber

2021

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Modifications of the deep‐level spectrum of copper‐doped Si due to the interaction with mobile nickel species are studied using the deep‐level transient spectroscopy (DLTS) and Laplace‐DLTS techniques. The neutral interstitial nickel atoms (Ninormali) are introduced at near room temperatures by etching in a Ni‐contaminated KOH aqueous solution. Two levels similar to the donor and acceptor levels of substitutional nickel are observed to form as a result of the copper−nickel interaction. Analysis of the depth profiles leads to a tentative conclusion that the levels belong to Ninormals atoms, which are influenced by a nearby copper−nickel complex. The disturbed Ninormals defects are formed via intermediate electrically active Ni−Cu complexes.

show abstract

“…The spectrum was dominated by the peak at 105 K due to the

{Cu}_{normals}

second acceptor level. [ 4,12,13 ] (Hereafter, the DLTS peak positions are given for the rate window of

49 {normals}^{- 1}

.) The

{Cu}_{185}

and

{Cu}_{145}

peaks were formed in the near‐surface region due to acid chemical etching and ascribed earlier to Cu−H and Cu−H 2 complexes, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…[ 12 ] In the as‐received samples, almost no deep levels were revealed in the upper half of the bandgap, as all

{Cu}_{normals}

atoms were consumed to form

{Cu}_{PL}

{Cu}_{PL}

complexes, and the second acceptor level of

{Cu}_{normals}

E_{normalc} -

0.16 eV [ 13,14 ] was detected in concentration of

(7 - 10) \times 10^{13} {cm}^{- 3}

.…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…Their transformation to substitutional atoms (

{Cu}_{normals}

and

{Ni}_{normals}

) with sets of deep levels is governed by the presence of available vacancies. [ 4 ] In case of copper, the

{Cu}_{normali}

\to

{Cu}_{normals}

transformation was demonstrated to proceed at room temperature due to vacancies created by irradiation with energetic particles. [ 5,6 ] In this work, we consider the situation when

{Ni}_{normali}

is introduced at near room temperatures into the crystals, where vacancies were already occupied by copper (

{Cu}_{normals}

).…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electrical Activation of Interstitial Ni in Cu‐Doped Si

Yarykin

Weber

2021

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

show abstract

“…However, even for the simplest type Cu (s) , the identification of the electronic levels among many observed levels has not been accomplished with certification, although recent development of density-functional-theory (DFT) calculations help with the identification. [22][23][24][25][26] The high reactivity of Cu atoms with other defects, 17,[27][28][29][30] whether intentionally introduced or not, make the identification difficult.…”

Section: Introductionmentioning

confidence: 99%

Revisiting the stable structure of the Cu₄ complex in silicon

Fujimura

Shirai

2021

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The photoluminescence (PL) spectrum of Cu-containing silicon has a sharp zero-phonon (ZP) band at 1.014 eV, whose center called CuPL has the local symmetry C 3v . Recent studies of experiment and theory revealed that the CuPL center is attributed to the Cu(s)Cu3(i) complex, which is composed of three interstitial Cu(i) atoms around a substitutional Cu(s) atom. This complex (called C-type) has the desired symmetry. However, in this study, we show that the lowest-energy structure is different. The tetrahedral structure Cu4, called T-type, has the lowest energy, with the value being 0.26 eV lower than that of C-type. Between these two types, there is an energy barrier of 0.14 eV, which allows C-type to exist in a metastable state. Details of the electronic properties of the T-type complex are reported, by comparing with C-type and other isovalent complexes. Whereas the Cu4 tetrahedron is incorporated in silicon in a manner compatible with the tetrahedral network, it also has its own molecular orbitals that exhibit metallic characteristics, in contrast to other complexes. The ZP of the PL spectrum is likely ascribed to the backflow mode of the Cu4 tetrahedron.

show abstract