The Cu−Si (Copper-Silicon) system

Olesinski, R. W.; Abbaschian, G. J.

doi:10.1007/bf02881559

Cited by 107 publications

(71 citation statements)

References 26 publications

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“…In the Si-Cu binary system, a eutectic transformation from liquid to Si and Cu 19 Si 6 exist at 1075 K (802°C) with X Si = 0.301 [48] or X Si = 0.307. [49] The liquidus between this point and silicon has been measured by thermal analysis.…”

Section: F Si-zn Systemmentioning

confidence: 99%

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Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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Thermodynamic knowledge about liquid silicon is crucial for the production of solar-grade silicon feedstock from molten silicon. In the current study, liquidus for silicon binary alloys is formulated using a previously developed method in which the liquidus curve is calculated using two constants. The liquidus measurements for the silicon portion of the silicon alloys with Al, Ca, Mg, Fe, Ti, Zn, Cu, Ag, Au, Pt, Sn, Pb, Bi, Sb, Ga, In, Ni, Pd, Mn, and Rh are reviewed, and the consistent data were used to determine the liquidus constants. The liquidus curves for silicon binary systems are calculated and plotted. It is indicated that the calculated liquidus curves fit well with the experimental data. A correlation between the determined liquidus constants is also observed, which can be used to gain a better understanding of the thermodynamics of the silicon binary melts.

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Section: F Si-zn Systemmentioning

confidence: 99%

“…This liquidus gives the composition X Si = 0.304 at the eutectic temperature 1075 K (802°C), which is located between the reported eutectic compositions mentioned previously. [48] H. Si-Ag System…”

Section: F Si-zn Systemmentioning

confidence: 99%

Liquidus of Silicon Binary Systems

Safarian

Kolbeinsen

Tangstad

2011

Metall Mater Trans B

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“…The lattice parameters increase with the addition of solutes in both Ga and Si bronzes [19,20], suggesting an increase in molar volume, as shown in figure 2a,b. However, as can be seen from the same figure, the increase in the molar volume in the Cu(Ga) solid solution is considerably more than that of Cu(Si).…”

Section: (C) Changes In the Lattice Parametermentioning

confidence: 82%

“…The analytic approach undertaken here for calculating the interdiffusion coefficients at different compositions is based on Wagner's relation [18] taking the smoothed composition profile into consideration, The variation of molar volume with composition is an important prerequisite forD estimation. It is estimated for both the systems considering the lattice parameter data as available in the literature [19,20] and is presented in figure 2b. The interdiffusion coefficients,D for Cu(Ga) and Cu(Si) systems at different compositions and temperatures are shown in figure 3a and b, respectively.…”

Section: (C) X-ray Diffraction Measurementsmentioning

confidence: 99%

Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

et al. 2014

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A detailed diffusion study was carried out on Cu(Ga) and Cu(Si) solid solutions in order to assess the role of different factors in the behaviour of the diffusing components. The faster diffusing species in the two systems, interdiffusion, intrinsic and impurity diffusion coefficients, are determined to facilitate the discussion. It was found that Cu was more mobile in the Cu-Si system, whereas Ga was the faster diffusing species in the Cu-Ga system. In both systems, the interdiffusion coefficients increased with increasing amount of solute (e.g. Si or Ga) in the matrix (Cu). Impurity diffusion coefficients for Si and Ga in Cu, found out by extrapolating interdiffusion coefficient data to zero composition of the solute, were both higher than the Cu tracer diffusion coefficient. These observed trends in diffusion behaviour could be rationalized by considering: (i) formation energies and concentration of vacancies, (ii) elastic moduli (indicating bond strengths) of the elements and (iii) the interaction parameters and the related thermodynamic factors. In summary, we have shown here that all the factors introduced in this paper should be considered simultaneously to understand interdiffusion in solid solutions.

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“…Those Ti atoms might react with VGCFs to form TiC, which is more stable than Cu 4 Ti( G TiC : −1.71 kJ/ mol 12) and G Cu4Ti : −1.12 kJ/mol at 1223 K 13) ). On the other hand, the reason why VGCFs did not react with Si in Cu-0.5Si/0.1VGCFs is attributed to that Si solid-solution was very stable in Cu-0.5Si alloy during the sintering at 1223 K [14][15][16] . Regarding the continuous decrease of the UTS and YS of Cu-0.4Ti/XVGCFs composites with an increase of VGCFs addition, as well as the reduced amount of Ti solid solution due to reaction with VGCFs, the effect of Ti content on the strength contribution to Cu-Ti alloys was investigated.…”

Section: Results and Dissectionsmentioning

confidence: 99%

Effect of Reaction between Alloying Element and VGCFs on Mechanical and Electrical Properties of PM Copper Alloy Composites Dispersed with VGCFs

et al. 2016

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In this research, the effect of alloying elements on the mechanical and electrical properties of powder metallurgy (PM) copper composite reinforced with vapor-grown carbon bers (VGCFs) was investigated. The alloying elements were titanium (Ti) and silicon (Si) that could easily form their carbides at elevated temperatures. The VGCFs-doped Cu-Ti composites showed a slightly decreased yield stress in comparison with the unadulterated Cu-Ti alloy. The electrical conductivity of the composite materials increased with increasing VGCFs content. However, the VGCFs-doped Cu-Si composites exhibited the same mechanical and electrical properties as the Cu-Si alloy. It was found that the reaction between Ti and VGCFs in forming TiC particles consumed the Ti solutes in the matrix and led to a reduction of solid solution strengthening effect by Ti elements, whereas the reaction between Si and VGCFs in forming SiC was observed. In addition, VGCFs adulteration showed no effect on the strength and conductivity improvement of Cu-Si alloy.

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The Cu−Si (Copper-Silicon) system

Cited by 107 publications

References 26 publications

Liquidus of Silicon Binary Systems

Liquidus of Silicon Binary Systems

Role of different factors affecting interdiffusion in Cu(Ga) and Cu(Si) solid solutions

Effect of Reaction between Alloying Element and VGCFs on Mechanical and Electrical Properties of PM Copper Alloy Composites Dispersed with VGCFs

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