The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface

Knap, W.; Alause, H.; Bluet, Jean‐Marie; Camassel, Jean; Young, Jeffrey F.; Khan, M. Asif; Chen, Q; Huant, S.; Shur, M. S.

doi:10.1016/0038-1098(96)00232-3

Cited by 46 publications

(32 citation statements)

References 13 publications

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“…Even in high-quality AlGaN/GaN heterostructures, the in-plane effective mass of 2D electrons measured by various direct and indirect techniques has shown effective mass enhancement and a large scatter of the data [13][14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30] ͑Fig. 1͒.…”

Section: Introductionmentioning

confidence: 99%

“…On leave from Institute of Semiconductor Physics, NASU, 03028 Kiev, Ukraine. JOURNAL OF APPLIED PHYSICS 105, 073703 ͑2009͒ resonance [14][15][16] and magnetotransport [17][18][19] results͒ that the inplane effective mass can exceed the bulk values considerably due to the increasing effect of conduction band nonparabolicity at higher Fermi energy. At the same time, even taking into account this effect, a large scatter of the data is not well understood and uncertainty of the effective mass in 2DEG with different carrier density and spatial confinement is large.…”

Section: Introductionmentioning

confidence: 99%

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Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Kurakin

Vitusevich

Danylyuk

et al. 2009

Journal of Applied Physics

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We report the results of direct measurements and a theoretical investigation of the in-plane effective mass in the two-dimensional electron gas of nominally undoped AlGaN/GaN heterostructures with a different degree of quantum confinement. It is shown that in most cases the conduction band nonparabolicity effect is overestimated and the electron wave-function penetration into the barrier layer should be taken into account. The contribution of the wave-function hybridization is determined to play the dominant role. The band edge effective mass value is deduced to be (0.2±0.01)m0.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Kurakin

Vitusevich

Danylyuk

et al. 2009

Journal of Applied Physics

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“…Taking a constant effective mass 0.2 m 0 (after Ref. [19]), we estimate for a 3.5 nm thickness E (n=1) = 0.15 eV. The final (correct) value is not important but, altogether, these results deserve the following comment.…”

Section: Resultsmentioning

confidence: 69%

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

Allègre

Lefèbvre

Juillaguet

et al. 1997

MRS Internet j. nitride semicond. res.

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We report both cw and time resolved optical investigations performed on an InGaN/GaN multiple quantum well grown by MOVPE on <0001>-oriented sapphire substrate. At low temperature we find a strong "blue" luminescence band, of which energy position corresponds well with the wavelength of stimulated emission when excited with a nitrogen laser. We show that this PL band appears systematically red-shifted with respect to the QWs features, which supports a standard picture of fluctuations of the indium composition. Coming to the time-resolved data, we find at low temperature at least two "blue" band components which are both associated with long decay times (up to 4-5 ns at 8K). The decay time is temperature dependent and, when rising the temperature, the recombination rate increases. At room temperature, we reach typical values in the range ~100 to 500 ps.

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“…Under applied high magnetic field H  the phenomenon of CR manifests itself in strong absorption of electromagnetic waves with the frequencies  close to the cyclotron one, . The CR experiments, dated by 90s, were conducted basically for AlGaN/GaN quantum heterostrucutures [1][2][3], while only one work was reported for GaN film [4]. In these works, the experiments were carried out at helium temperatures and even lower, and the values of electron mobility of the investigated samples were of a few thousands cm 2 /(Vs).…”

Section: Introductionmentioning

confidence: 99%

“…Typically, well-pronounced CR absorption was observed for the far-infrared radiation at T 13  H in ref. [1] up to 40 T in ref. [3].…”

Section: Introductionmentioning

confidence: 99%

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

Korotyeyev¹

2013

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The theory of THz radiation transmission through the film of compensated GaN of cubic modification under action of electric and magnetic fields has been developed. In the THz frequency range, spectra of the dynamic mobility tensor have been obtained for applied steady-state electric fields of several kV/cm and magnetic fields of several T. The spectra of transmission, reflection and loss coefficients have been analyzed for the Voigt configuration used for the applied fields. It has been shown that the transmitted wave becomes elliptically polarized, and the spectra of polarization characteristics such as ellipticity and rotation angle of the large axis of polarization ellipse were investigated under conditions of cyclotron resonance and optical phonon transit-time one. It has been found that, in certain frequency bands, polarization characteristics have the features valid for both resonances. The new optical method based on the analysis of ellipticity and rotation angle spectra is offered for determination of the low-field mobility.

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The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface

Cited by 46 publications

References 13 publications

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

Peculiarities of THz-electromagnetic wave transmission through the GaN films under conditions of cyclotron and optical phonon transit-time resonances

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