The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells

Concentration Dependences of the Electron Effective Mass, Fermi Energy, and Filling of Subbands in Doped InAs/AlSb Quantum Wells

“…3. Dependences of the electron concentrations in three first subbands - (1) , (2) , and (3) -on the total twodimensional concentration in the InAs/AlSb quantum well with = 15 nm and = 1.35 eV, and their comparison with experimental data [8] Fig. 4.…”

“…Heterostructures on the basis of InAs and InSb semiconductors have been intensively studied recently [1][2][3]. Those semiconductors are characterized by a strong nonparabolicity of their conduction bands.…”

Effect of Temperature and Band Nonparabolicity on Density of States of Two Dimensional Electron Gas

“…taking into account the spectrum (1) and 3. Figure 2 and Figure 3 shows the energy dependence of the DOS for the QW width 15 nm L = appropriately InAs, InSb, and calculated by the Formula (9).…”

“…Recently, investigations of narrow band gap semiconductors InAs, InSb [1]- [3] based heterostructures have been paid much attention because they are essential to developing semiconductor devices. In these structures, the conduction band is strongly nonparabolicity.…”

Effects of Band Nonparabolicity and Band Offset on the Electron Gas Properties in <i>InAs/AlSb</i> Quantum Well

“…In semiconductors, InAs and InSb of the conduction band are characterized by a strong nonparabolicity and recently intensively studied heterostructures based on them [1]- [3]. Nonparabolicity of the conduction band and the nature of the spin splitting of the electron in the quantum well (QW) are studied by the cyclotron resonance [4]- [7].…”