The cyclotron resonance linewidth in two-dimensional electron accumulation layers in InSe

Kress-Rogers, E.; Nicholas, R.J.; Chévy, A.

doi:10.1088/0022-3719/16/12/027

Cited by 12 publications

(4 citation statements)

References 19 publications

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“…It was not the dominant mechanism in graphene and therefore was never observed. Similar trend were reported in InSe quantum well and was interpreted as scattering over Gaussian potential larger or equal to the cyclotron orbit [20]. The saturation of scattering rate above 4 T in figures 3(c) and (d) is due to electron-phonon scattering as cyclotron frequency reaches ∼0.7 THz at 4 T in both samples which corresponds to either Kohn anomaly of surface β phonon or highest acoustic phonon frequency [4].…”

Section: πϵsupporting

confidence: 81%

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films

Han¹,

Salehi²,

Oh³

et al. 2022

J. Phys. D: Appl. Phys.

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This work focuses on the low frequency Drude response of bulk-insulating topological insulator Bi2Se3 films. The frequency and field dependence of the mobility and carrier density are measured simultaneously via time-domain terahertz spectroscopy. These films are grown on buffer layers, capped by Se, and have been exposed in air for months. Under a magnetic field up to 7 Tesla, we observe prominent cyclotron resonances (CRs). We attribute the sharp CR to two different topological surface states (TSSs) from both surfaces of the films. The CR sharpens at high fields due to an electron-impurity scattering. By using magneto-terahertz spectroscopy, we confirm that these films are bulk-insulating, which paves the way to use intrinsic topological insulators without bulk carriers for applications including topological spintronics and quantum computing.

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Section: πϵsupporting

confidence: 81%

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films

Han¹,

Salehi²,

Oh³

et al. 2022

J. Phys. D: Appl. Phys.

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“…Thus, in such a “uniform” model, with respect to shallow donors' distribution along the c ‐axis, it is complicated to explain the irradiation influence. That is why we have used the simpler model . In order to apply it, it is necessary to suppose that after the electron irradiation there is the following: –the contribution of 2D electrons to conduction increases significantly, –at low temperatures the 2D conduction is much higher than the three‐dimensional one, –a redistribution of the centers acting as shallow donors in the bulk of the samples takes place, –the activation energy of 2D electrons into the 3D conduction band is enough high (∼0.1 eV). …”

Section: Discussionmentioning

confidence: 99%

“…In such energy subbands, electrons behave as a degenerate 2D electron gas, i.e., they keep their free motion along the layers but are restricted for motion across them. That 2D model was first used to explain in n‐InSe the cyclotron resonance and Shubnikov–de Haas experiments at low temperatures . On its basis, it was a success to prove the importance of a 2D electron gas in charge transport at much higher temperatures .…”

Section: Discussionmentioning

confidence: 99%

“…Thus, in such a "uniform" model, with respect to shallow donors' distribution along the c-axis, it is complicated to explain the irradiation influence. That is why we have used the simpler model [26][27][28]. In order to apply it, it is necessary to suppose that after the electron irradiation there is the following:…”

Section: Characterization Of a 2d Electron Gasmentioning

confidence: 99%

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Two-band conduction in electron-irradiated n-InSe single crystals

Mintyanskii

Savitskii

Kovalyuk

2014

Phys. Status Solidi B

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The electrical properties of n‐InSe single crystals irradiated with 9.2‐MeV electrons are investigated in the temperature range 80–400 K. The observed extrema in the temperature dependences of the Hall coefficient and the electron mobility are explained by assuming the existence of mixed conduction with the carriers in the 3D conduction band and 2D electron gas. The numerical calculations were carried out by taking into account a redistribution of the carriers between the conduction band and the states of a 2D electron gas and well reproduce the experimental data. A numerical analysis of the temperature dependences of the concentration of 3D electrons within the single donor–single acceptor model and that of the Fermi‐level temperature dependences have shown that n‐InSe irradiated with high‐energy electrons is highly compensated (NA/ND = 0.988–0.998) with a concentration of the donors ND = (0.69–1.2) × 1017 cm−3 and the activation energy of three‐dimensional conduction is 93–139 meV.

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Electrical Conductivity Anisotropy in Tin‐Doped n‐Type Indium Selenide

Pomer

Bonet

Segura

et al. 1988

Physica Status Solidi (b)

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Electrical conductivity anisotropy of n-type indium selenide samples doped with different concentrations of tin is studied between 30 and 300 K. The anisotropy ratio is found to depend exponentially on the inverse temperature, the activation energy E , and the pre-exponential factor varying with free carrier concentration. This behaviour is explained by the existence of potential wells created by planar aggregates of ionized donor impurities screened by free electrons. A simple model in which the depth of these potential wells is calculated as a function of temperature, charge density in the planar defects, and electron concentration, gives account of the measured activation energies, but does not explain the high value of the anisotropy ratio. The existence of strictly two-dimensional electrons bound to planar defects not contributing to the electrical conduction across the layers is proposed to explain this result.Es wird die Anisotropie der elektrischen Leitfahigkeit von n-leitenden Indiumselenidproben, die mit verschiedenen Konzentrationen von Zinn dotiert sind, zwischen 30 and 300 K untersucht. Es wird gefunden, daS das Anisotropieverhaltnia exponentiell von der inversen Temperatur abhangt, wobei die Aktivierungsenergie K und der exponentielle Vorfaktor mit der Konzentration freier Ladungstriiger variiert. Dieses Verhalten wird mit der Existenz von Potentialmulden erkliirt, die durch ebene Assoziate von ionisierten Donator-Storstellen erzeugt werden, die durch freie Elektronen abgcschirmt werden. Ein einfaches Modell, mit dem die Tiefe dieser Potentialniipfe als Funktion der Temperatur, Ladungsdichte in den planaren Defekten und Elektronenkonzentration berechnet wird, erklllrt die gemessenen Aktivierungsenergien, jedoch nicht den hohen Wert des Anisotropieverh<nisses. Die Existenz von strikt zweidimensionalen Elektronen, die an planare Defekte gebunden sind und nicht zur elektrischen Leitfahigkeit durch die Schichten hindurch beitragen, wird zur Erklarung dieses Ergebnisses vorgeschlagen. l )

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The cyclotron resonance linewidth in two-dimensional electron accumulation layers in InSe

Cited by 12 publications

References 19 publications

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films

Two-band conduction in electron-irradiated n-InSe single crystals

Electrical Conductivity Anisotropy in Tin‐Doped n‐Type Indium Selenide

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The cyclotron resonance linewidth in two-dimensional electron accumulation layers in InSe

Cited by 12 publications

References 19 publications

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi2Se3 thin films

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi2Se3 thin films

Two-band conduction in electron-irradiated n-InSe single crystals

Electrical Conductivity Anisotropy in Tin‐Doped n‐Type Indium Selenide

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A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films

A new type of cyclotron resonance from charge-impurity scattering in the bulk-insulating Bi₂Se₃ thin films