“…These limitations of Si and HPGe detectors have directed efforts to investigate compound semiconductor based detectors, such as CdTe and CZT, which are considered an excellent choice for room temperature gamma-ray spectroscopy due to their good quantum efficiencies at high energies [1], [10]. However, the effect of poor hole transport in CdTe and CZT detectors (hole mobility life time product, µτ, are 10 -4 and 10 -5 cm 2 /V in CdTe and CZT respectively, in comparison to 1 cm 2 /V in Si and Ge detectors [1]) in some cases represents a critical limitation causing low energy tailing in the spectrum degrading the detector energy resolution especially at high energies [3], [6], [11], [12]. Many techniques have been proposed to overcome the problem of poor hole transport.…”