The Dawn of Ultrafast Nonlinear Optics in the Terahertz Regime

Blanchard, F.; Razzari, Luca; Su, Fuhai; Sharma, Gargi; Morandotti, Roberto; Ozaki, T.; Reid, M.; Hegmann, Frank A.

doi:10.1007/978-1-4614-3538-9_11

Cited by 5 publications

(2 citation statements)

References 71 publications

(105 reference statements)

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“…The electric E and magnetic B fields in the CB‐IR radiation might interact with the charge carriers in the semi‐conducting pillars of the bj‐PGs, and give rise to voltage as in antennas. Indeed, antennas can intercept electromagnetic radiation, specifically in the MIR, THz, and microwave ranges, and produce a voltage . In the bj‐PG, the production of Δ V due to the interaction between CB‐IR radiation and charge carriers can be roughly pictured as follows:

Δ V = \frac{n_{ph} h (ν_{0} + Δ ν)}{q_{0} (1 + \cos θ_{0})}

where n ph is the number of photons in the CB‐IR radiation, h is Planck's constant, ν 0 the lower frequency of the used CB‐IR radiation, Δν the frequency range, q 0 the average charge in the semi‐conducting pillars of the bj‐PGs, and θ 0 the angle of incidence of the CB‐IR radiation on the bj‐pG.…”

Section: Discussionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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The mechanism that activates a bi-junction power generator under the effects of heat is the Seebeck effect, that is, the production of voltage difference DV(t) is directly proportional to the temperature difference DT(t) between the ''hot'' and ''cold'' junctions of the device. This phenomenon is well established and is known as thermoelectric power generation. Here, it is shown that, instead, the causal and linear relationship between DV(t) and DT(t) is lost when continuous broadband infrared (CB-IR) radiation illuminates a bi-junction power generator in an insulated compartment. The observed phenomenon is IR power generation. Heat transfer calculations fail in explaining the experimental trends. The interaction between CB-IR radiation and the charge carriers in the bi-junction power generator might play a role in the DV(t) production, depending upon the geometry of the experimental setup. The longitudinal propagation of collective oscillations, for example, polaritons, in the plates protecting the ''hot'' and ''cold'' junctions of the bi-junction power generator could explain the DV(t) production and the characteristic time constants. The findings should be considered in the design, fabrication, and improvement of thermopiles, power meters, and IR energy-harvesting devices.

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Δ V = \frac{n_{ph} h (ν_{0} + Δ ν)}{q_{0} (1 + \cos θ_{0})}

Section: Discussionmentioning

confidence: 99%

Infrared power generation in an insulated compartment

et al. 2013

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“…At lower THz fields around 40 kV/cm, intervalley scattering is induced by the interaction of charge carriers with the incident THz field and lowers the carrier mobility. 19,28 At higher field strengths >100 kV/cm, impact ionization results from the interaction of charge carriers with the enhanced resonant THz fields localized in the MM capacitive gap, which increases the in-gap GaAs conductivity. 19 Figure 2 shows numerical simulations of how these two processes change the MM response, using a commercial finite difference time domain solver.…”

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confidence: 99%

Nonlinear terahertz metamaterials with active electrical control

Keiser

Karl

et al. 2017

Applied Physics Letters

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We present a study of an electrically modulated nonlinear metamaterial consisting of an array of split-ring resonators fabricated on n-type gallium arsenide. The resonant metamaterial nonlinearity appears as an intensity-dependent transmission minimum at terahertz frequencies and arises from the interaction between local electric fields in the split-ring resonator (SRR) capacitive gaps and charge carriers in the n-type substrate. We investigate the active tuning range of the metamaterial device as the incident terahertz field intensity is increased and conversely the effect of an applied DC bias on the terahertz field-induced nonlinear modulation of the metamaterial response. Applying a DC bias to the metamaterial sample alters the nonlinear response and reduces the net nonlinear modulation. Similarly, increasing the incident terahertz field intensity decreases the net modulation induced by an applied DC bias. We interpret these results in terms of DC and terahertzfield-assisted carrier acceleration, scattering, and multiplication processes, highlighting the unique nature of this DC-field modulated terahertz nonlinearity. Published by AIP Publishing.

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