2024
DOI: 10.1088/2053-1583/ad2108
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The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides

Shoaib Khalid,
Bharat Medasani,
John L Lyons
et al.

Abstract: Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies are due in part to shortcomings in prior first-principles calculations of defects in the semiconducting two-dimens… Show more

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Cited by 4 publications
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“…Optical techniques involve creating electronhole pairs and measuring the broad emission peak in the optical spectrum created by electrons in the defect states recombining with holes. First-principles calculations have been used previously to identify the defects by computing the optical emission from the defects and the sub-band levels created by the defects in the band gap for different materials [32][33][34][35]. In this work, using first principle calculations we discuss the possible mechanism behind the near-infrared broad emission peak related to bulk MoS 2 recently measured by Fabri et al [28].…”
mentioning
confidence: 90%
“…Optical techniques involve creating electronhole pairs and measuring the broad emission peak in the optical spectrum created by electrons in the defect states recombining with holes. First-principles calculations have been used previously to identify the defects by computing the optical emission from the defects and the sub-band levels created by the defects in the band gap for different materials [32][33][34][35]. In this work, using first principle calculations we discuss the possible mechanism behind the near-infrared broad emission peak related to bulk MoS 2 recently measured by Fabri et al [28].…”
mentioning
confidence: 90%