The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures

Revesz, A. G.; Hughes, H.L.

doi:10.1007/978-94-011-0109-7_13

Cited by 9 publications

(1 citation statement)

References 28 publications

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“…The accumulation of the positive charge is both due to the traps initially present in the oxide and due to radiationinduced traps. The density of hole traps (and their precursors) in the buried oxide of SOI depends both on the fabrication technology (properties) of the initial oxide and on the fabrication technology of SOI FETs [9,10] provided that ion implantation of SOI-FET body is used and defects can also be introduced in the buried oxide of SOI structures. Therefore, trying to clarify the role of post-implantation defects, in this study we examined the accumulation of radiation-induced charges in the buried oxide of as-fabricated (non-implanted) SOI structures and in the buried oxide of SOI structures additionally subjected to ion implantation.…”

Section: Introductionmentioning

confidence: 99%

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation

Naumova¹,

Fomin²,

Ilnitsky³

et al. 2012

Semicond. Sci. Technol.

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In this study, we examined the effect of preliminary boron or phosphorous implantation on charge accumulation in the buried oxide of SOI-MOSFETs irradiated with γ -rays in the total dose range (D) of 10 5 -5 × 10 7 rad. The buried oxide was obtained by high-temperature thermal oxidation of Si, and it was not subjected to any implantation during the fabrication process of SOI structures. It was found that implantation with boron or phosphorous ions, used in fabrication technologies of SOI-MOSFETs, increases the concentration of precursor traps in the buried oxide of SOI structures. Unlike in the case of boron implantation, phosphorous implantation leads to an increased density of states at the Si/buried SiO 2 interface during subsequent γ -irradiation. In the γ -irradiated SOI-MOSFETs, the accumulated charge density and the density of surface states in the Si/buried oxide layer systems both vary in proportion to k i ln D. The coefficients k i for as-fabricated and ion-implanted Si/buried SiO 2 systems were evaluated. From the data obtained, it was concluded that a low density of precursor hole traps was a factor limiting the positive charge accumulation in the buried oxide of as-fabricated (non-implanted) SOI structures with the bonded Si/buried SiO 2 interface.

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Section: Introductionmentioning

confidence: 99%

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation

Naumova¹,

Fomin²,

Ilnitsky³

et al. 2012

Semicond. Sci. Technol.

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CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

2015

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Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

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Soi Materials

Colinge¹

2004

Silicon-on-Insulator Technology: Materials to VLSI

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The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures

Cited by 9 publications

References 28 publications

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation

CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

Soi Materials

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The Defect Structure of Buried Oxide Layers in SIMOX and BESOI Structures

Cited by 9 publications

References 28 publications

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2interface under γ-irradiation: effect of preliminary ion implantation

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO2interface under γ-irradiation: effect of preliminary ion implantation

CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

Soi Materials

Contact Info

Product

Resources

About

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation

Charge accumulation in the buried oxide of SOI structures with the bonded Si/SiO₂interface under γ-irradiation: effect of preliminary ion implantation