The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface

Fan, Mingming; Cen, Weifu; Cai, Xunming; Liao, Yangfang; Xie, Jing; Quan, Xie

doi:10.1016/j.apsusc.2017.08.173

Cited by 18 publications

(2 citation statements)

References 29 publications

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“…These vacancy defects often created deep energy levels within the band gap of crystals, thereby exerting a profound impact on the electrical and optical properties of the materials [42,43]. In 4H-SiC, carbon vacancies (Vc) and silicon vacancies (V Si ) are the two main forms of existence like figures 2(b) and (c), both of which are electrically active and stable at room temperature [45]. Currently, point defects can be characterized by many techniques, such as Theoretically, Vc is a dominant defect with harmful and strong influences on the carrier lifetime (τ) of 4H-SiC [47][48][49][50].…”

Section: Point Defects 211 Vacanciesmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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Under the impetus of global carbon peak and carbon neutrality goals, a new generation of semiconductor material is urgently needed in various aspects of power electronic systems. In comparison to traditional semiconductor materials like single-crystal silicon, the outstanding characteristics of 4H silicon carbide (4H-SiC) have gradually positioned it as a crucial semiconductor material for emerging power semiconductor applications. Given the significance of impurities and defects in the semiconductor, comprehensive and in-depth understanding of impurities and defects about 4H-SiC plays a crucial guiding role. This paper, building upon a brief overview of the current state of 4H-SiC research, summarizes the experimental and theoretical advancements in the study of defects and impurities about 4H-SiC in recent years. Besides, we also systematically review the categories of defects in 4H-SiC, introduce methods for characterizing and identifying defects in 4H-SiC, and thoroughly discuss potential doping technologies in 4H-SiC. Challenges faced in the research of defects and impurities are ﬁnally outlined.

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Section: Point Defects 211 Vacanciesmentioning

confidence: 99%

Advances and challenges in 4H silicon carbide: defects and impurities

Yang,

Tong,

et al. 2024

Phys. Scr.

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“…[10][11][12] Compared to traditional semiconductors, wide bandgap semiconductors, such as SiC, AlGaN, ZnMgO, diamond, and Ga 2 O 3 , [13][14][15] have potential advantages in developing highly sensitive photodetectors for weak-light detection by virtue of their extremely low intrinsic carrier concentration and high physical stability along with chemical properties. [16][17][18] Among them, 4H-SiC shows more favorable advantages owing to the commercially available (0001) wafers with low intrinsic carrier density, 19 and thereby the dark current of most reported 4H-SiC based photodetectors can reach the pA level. 20,21 The interfacial carriers existing on the surfaces of the photosensitive layer also significantly contribute to the dark current.…”

Section: Introductionmentioning

confidence: 99%

Imaging ultra-weak UV light below 100 pW cm⁻² using a 4H–SiC photodetector with an Al₂O₃ interfacial layer

Pei,

Wang,

et al. 2024

Phys. Chem. Chem. Phys.

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Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

Yang,

Wang,

Chen

et al. 2024

Laser & Photonics Reviews

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In the rapidly evolving era of information and intelligence,microelectronic devices are pivotal across various fields, such as mobile devices, big data computing, electric vehicles, and aerospace. However, the electrical performance of these devices often suffers due to residual stress from microelectronic manufacturing. This issue is compounded by the additional thermal stress that accumulates during device operation. Therefore, it is essential to understand, characterize, and control this residual stress to ensure the reliability and efficiency of microelectronic devices. Raman spectroscopy emerges as an invaluable tool for nondestructive, fast, noncontact, and precise testing of micro‐scale mechanics, significantly aiding in stress and strain analysis within microelectronic manufacturing. This article aims to provide a thorough overview of the theory and application beyond a mere compilation of recent advances. Theoretically, it critically evaluates existing models that describe the Raman‐stress relation. Practically, it explores the application of Raman spectroscopy in researching residual stress in various components, including substrate materials, epitaxial films, and packaging. Through a detailed examination of current applications, it highlights the significance of Raman spectroscopy in understanding micro‐scale mechanics. Finally, it offers both theoretical and practical insights into the future developments of Raman‐stress detection technology.

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The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface

Cited by 18 publications

References 29 publications

Advances and challenges in 4H silicon carbide: defects and impurities

Advances and challenges in 4H silicon carbide: defects and impurities

Imaging ultra-weak UV light below 100 pW cm⁻² using a 4H–SiC photodetector with an Al₂O₃ interfacial layer

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

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The defects regulating for the electronic structure and optical properties of 4H-SiC with (0001) surface

Cited by 18 publications

References 29 publications

Advances and challenges in 4H silicon carbide: defects and impurities

Advances and challenges in 4H silicon carbide: defects and impurities

Imaging ultra-weak UV light below 100 pW cm−2 using a 4H–SiC photodetector with an Al2O3 interfacial layer

Residual Stress Characterization in Microelectronic Manufacturing: An Analysis Based on Raman Spectroscopy

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Imaging ultra-weak UV light below 100 pW cm⁻² using a 4H–SiC photodetector with an Al₂O₃ interfacial layer