The density of states in the mobility gap ofa-Si1−x Ge x films

Abstract

Summary. --The density of states distribution (DOS) in the mobility gap of undoped glow-discharge a-Sil_ x G% : H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge. The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional hydrogen in discharge.PACS 71.20 -Electron density of states determinations.