The dependence of hydrofluoric acid concentration during anodization on photoluminescence of porous silicon

Ohmukai, Masato; Nishiguchi, Yoshinori; Tsutsumi, Yasuo

doi:10.1016/s1468-6996(01)00072-9

Cited by 3 publications

(3 citation statements)

References 13 publications

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“…The images show that PSi has a sponge like structure and the porous width increased as the etching time increased, as noted in Table (3). As can be seen from Figure (10), the width and porosity of the pores increased with increasing etching time when HF concentration and current density were kept constant. This is attributed to the interaction of chemical dissolution of PSi layer in HF solution leading to PSi owing to its large surface area.…”

Section: B Surface Properties Of Psimentioning

confidence: 84%

“…They exhibited a shift in the luminescence spectrum when the growth conditions changed. Furthermore, the effect of HF concentration mixed with ethanol on PL was investigated by Ohmukai and Collins in 2001 [10]. They concluded that the strong PL was produced when the PSi anodized with the electrolyte containing 35 or 40% HF acid Foll et al in 2002 [11] showed that photo-generation in heterostructures (Ni/PSi/p-Si/Ni) occurs in both regions of a thin PSL and Psi base.…”

Section: Introductionmentioning

confidence: 99%

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An Overview of the Evolution of the Porous Silicon material: A review

Ali¹,

Younus²,

Karomi³

2020

J.Edu.Sci.

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Recently, the properties and applications of porous has become the main subject of a vast numbers of books and review articles. Porous silicon has demonstrated significant versatility and promise for a wide range of optoelectronic applications due to its large surface area and intense photoluminescence at room temperature. In this review, we describe the fabrication techniques and experimental improvements made towards porous silicon (PSi) and we provide a full picture of realization and characterization of this material. We also highlight its important chemical, structure and surface properties. Additionally, we will introduced the techniques that have been used to characterize porouse silicon, including Fourier transform infrared spectroscopy, X-ray diffraction measurements, atomic force microscope images (AFM) and a scanning probe microscope (SEM). Moreover, the effect of the current density and etching time are also documented in this review. In summary, porous silicon has undergone vast improvement in both fabrication and characterization methods, which makes it an attractive modern material.

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Section: B Surface Properties Of Psimentioning

confidence: 84%

Section: Introductionmentioning

confidence: 99%

An Overview of the Evolution of the Porous Silicon material: A review

Ali¹,

Younus²,

Karomi³

2020

J.Edu.Sci.

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“…These defects and surface states serve as capture and emission centers for electrons and holes, facilitating PL emission [ 33 ]. Additionally, surface defects and states may participate in the radiative recombination process of electrons and holes, giving rise to PL [ 34 ]. The characteristics of these surface defects may correspond to specific wavelengths.…”

Section: Resultsmentioning

confidence: 99%

Exploring the Influence of Solvents on Electrochemically Etched Porous Silicon Based on Photoluminescence and Surface Morphology Analysis

Tsai,

Lee,

Lin

et al. 2024

Materials

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Porous silicon (PSi) has promising applications in optoelectronic devices due to its efficient photoluminescence (PL). This study systematically investigates the effects of various organic solvents and their concentrations during electrochemical etching on the resulting PL and surface morphology of PSi. Ethanol, n-butanol, ethylene glycol (EG) and N,N-dimethylformamide (DMF) were employed as solvents in hydrofluoric acid (HF)-based silicon etching. The PL peak position exhibited progressive blue-shifting with increasing ethanol and EG concentrations, accompanied by reductions in the secondary peak intensity and emission linewidth. Comparatively, changes in n-butanol concentration only slightly impacted the main PL peak position. Additionally, distinct morphological transitions were observed for different solvents, with ethanol and n-butanol facilitating uniform single-layer porous structures at higher concentrations in contrast to the excessive etching caused by EG and DMF resulting in PL quenching. These results highlight the complex interdependencies between solvent parameters such as polarity, volatility and viscosity in modulating PSi properties through their influence on surface wetting, diffusion and etching kinetics. The findings provide meaningful guidelines for selecting suitable solvent conditions to tune PSi characteristics for optimized device performance.

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