The dependence of photoconductive and photoelectromagnetic effects on slab thickness in InSb at room temperature

Hanus, W.; Oszwałdowski, M.

doi:10.1002/pssa.2210360203

Cited by 8 publications

(2 citation statements)

References 11 publications

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“…A s one can see, the surface recombination velocity on the etched face varies in the range 5 x lo3 < s < lo4 cm/s and does not depend much on the temperature. The same value s a t T = 300 K has been recently obtained in [14]. I n conclusion we shall note the practical aspect of the obtained results.…”

Section: -supporting

confidence: 81%

Magnetoconcentration effect at Auger recombination of current carriers

Malyutenko

Guga

Malozovskii

1981

Phys. Stat. Sol. (a)

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A theory of the magnetoconcentration effect under conditions when two mechanisms of current carrier recombinationinterband Auger and radiative recombinationtake place, is described. The spatial distribution of current carriers in the cross-section of the specimen found in electric and magnetic crossed fields and the type of current-voltage characteristics are analysed. The theory can be used for the investigation of the peculiarities of this effect in narrow-band semiconductors. Experiments on InSb samples a t room temperature, are in a qualitative agreement with the theory. From the analysis of the current-voltage characteristics of the crystals, the values of surface recombination velocities on the faces as well as the magnetic sensitivity of the crystals are estimated.Eine Theorie des Magnetokonzentrationseffekts wird unter der Bedingung, da13 zwei Mechanismen fur die Stromtragerrekombination wirksam sind -Auger-Interbandrekombination und strahlende Rekombinationbeschrieben. Die raumliche Verteilung der Stromtrager iiber denQuerschnitt der Probe, die a m Untersuchungen in gekreuzten elektrischen und magnetischen Feldern erhalten wird, sowie der Typ der Strom-Spannungscharakteristiken werden analysiert. Die Theorie kann fur die Untersuchung der Besonderheitcn dieses Effekts in schmalbandigen Halbleitern benutzt werden. Experimente a n InSb-Proben bei Zimmertemperatur befinden sich in qualitativer ubereinstimmung mit der Theorie. Aus der Analyse der Strom-Spannungscharakteristiken der Kristalle werden sowohl die Werte der Oberflachenrekombinationsgeschwindigkeiten als auch der magnet,ischen Empfindlichkeit der Kristalle berechnet. l) Prospekt Nauki 115, 253028 Kiev-28, USSR. 2, If surface recombination velocities on the plate faces differ essentially (s+ >s-), under the conditions of transverse carrier drift due to Lorentz force the pre-surface concentration a t the face s-can be increased considerably a t the expense of thermal generation of pairs by the face s+. 9 .

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Section: -supporting

confidence: 81%

Magnetoconcentration effect at Auger recombination of current carriers

Malyutenko

Guga

Malozovskii

1981

Phys. Stat. Sol. (a)

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“…Assuming the values of x(3L) and n(A) presented in [30] for InSb, also assuming the values of nl= 1.0 and n, = 1.5 as the refractive indexes of air and glass substrate, some numerial calculations which characterize the PME effect has been carried out by an ODRA 1305 computer. As the transport and recombination parameters of the investigated semiconductor we assumed the values of pn = 6 m2/Vs, ,up = = 0.06 mZ/Vs, and z, = zp = lo-' s, which correspond to the parameters reported in [27] for melt-grown InSb thin layers a t room temperature. The surface recombination velocity in InSb is a very sensitive function of the surface treatment.…”

Section: The Interference Photomagnetoelectric Effectmentioning

confidence: 99%

The Possible Existence of the Interference Photomagnetoelectric Effect

Nowak

1982

phys. stat. sol. (a)

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The theory of the PME effect is extended to the case of a thin sample in which the interference of the radiation reflected from the sample surfaces can be marked. The obtained results suggest the possible existence of a so‐called interference photomagnetoelectric effect. The new, additional PME mechanism should be useful in optimization of the infrared PME detectors. It should also give the possibility of carrying out an electric method of measuring refractive indexes of semiconductors. As an example the dependences of the PME effect on sample thickness and wavelength of radiation are calculated for InSb.

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The dependence of spectral distributions of the photoconductive and photo-electromagnetic effect on sample thickness in InSb

Oszwałdowski

1976

Phys. Stat. Sol. (a)

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Spectral distributions of the photoconductive and photo‐electromagnetic effect for various ratios, d/L, of the sample thickness to the diffusion length and various surface recombination velocities as parameters are computed for InSb samples having the front surface recombination velocities not higher than the back surface recombination velocities (s ≦ t). The results are presented in graphical form for d/L = 0.1, 1, 3, 10, and various combinations of the surface recombination velocities, s and t. The theoretical results are compared with experimental data for melt‐grown InSb layers at room temperature. A strong dependence of the computed and experimental spectral distributions on d/L is found on transition from thin samples (d/L ≦ 1) to thick samples (d/L ≧ 1).

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The dependence of photoconductive and photoelectromagnetic effects on slab thickness in InSb at room temperature

Cited by 8 publications

References 11 publications

Magnetoconcentration effect at Auger recombination of current carriers

Magnetoconcentration effect at Auger recombination of current carriers

The Possible Existence of the Interference Photomagnetoelectric Effect

The dependence of spectral distributions of the photoconductive and photo-electromagnetic effect on sample thickness in InSb

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