The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

Rezeq, Moh’d; Ali, Ahmed; Patole, Shashikant P.; Eledlebi, Khouloud; Dey, Ripon Kumar; Cui, Bo

doi:10.1063/1.5035400

Cited by 23 publications

(13 citation statements)

References 27 publications

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“…Thus, the smaller energy band width facilitates higher tunneling probability for electrons from the tip into n-Si substrate, leading to higher magnitude of the reverse tunneling current, for the positive sweep voltage at the substrate. This basic nano-Schottky model is detailed elsewhere 28,34 . For further understanding of the electric field enhancement at the nano-tip/Semiconductor interface, models for two probes with 15 nm and 5 µm radii are constructed using physics-based TCAD simulation to map the interface electric field.…”

Section: Resultsmentioning

confidence: 99%

“…The main advantage of C-AFM electrical measurement is its ability to gather local conductivity information 31–33 . Due to the very small size of the nanotip, one can detect the effect of light on the tunneling current from the nanotip to substrate due to narrowing of the energy band gap width by the enhancement of local electric field at the nanotip-substrate interface 34 .…”

Section: Introductionmentioning

confidence: 99%

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Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces

Abbas

Rezk

Alkindi

et al. 2019

Sci Rep

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Silicon (Si)-based photodetectors are appealing candidates due to their low cost and compatibility with the complementary metal oxide semiconductor (CMOS) technology. The nanoscale devices based on Si can contribute efficiently in the field of photodetectors. In this report, we investigate the photodetection capability of nano-Schottky junctions using gold (Au) coated conductive atomic force microscope (C-AFM) tips, and highly cleaned n-Si substrate interface. The Au nanotip/n-Si interface forms the proposed structure of a nano Schottky diode based photodetector. The electrical characteristics measured at the nanoscale junction with different Au nanotip radii show that the tunneling current increases with decreasing the tip radius. Moreover, the tunneling process and photodetection effects are discussed in terms of barrier width/height decrease at the tip-semiconductor interface due to the applied electric field as well as the generation of plasmon-induced hot-electron at the nanoparticle (i.e. C-AFM tip)/n-Si interface. Furthermore, the photodetection sensitivity is investigated and it is found to be higher for C-AFM tips with smaller radii. Moreover, this research will open a new path for the miniaturization of photodetectors with high sensitivity based on nano-Schottky interfaces.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces

Abbas

Rezk

Alkindi

et al. 2019

Sci Rep

Self Cite

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“…Thus, R s considers the resistance of the LC-CNTs plus the junction resistances. This junction can be modeled as a Schottky barrier [31,53], and the current through the thermionic emission diffusion (TED) theory [54], described by:…”

Section: Electrical Characterization Of the Lc-cnts/si Junctionmentioning

confidence: 99%

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

et al. 2021

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Highly ordered nanostructure arrays have attracted wide attention due to their wide range of applicability, particularly in fabricating devices containing scalable and controllable junctions. In this work, highly ordered carbon nanotube (CNT) arrays grown directly on Si substrates were fabricated, and their electronic transport properties as a function of wall thickness were explored. The CNTs were synthesized by chemical vapor deposition inside porous alumina membranes, previously fabricated on n-type Si substrates. The morphology of the CNTs, controlled by the synthesis parameters, was characterized by electron microscopies and Raman spectroscopy, revealing that CNTs exhibit low crystallinity (LC). A study of conductance as a function of temperature indicated that the dominant electric transport mechanism is the 3D variable range hopping. The electrical transport explored by I–V curves was approached by an equivalent circuit based on a Schottky diode and resistances related to the morphology of the nanotubes. These junction arrays can be applied in several fields, particularly in this work we explored their performance in gas sensing mode and found a fast and reliable resistive response at room temperature in devices containing LC-CNTs with wall thickness between 0.4 nm and 1.1 nm.

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“…İş fonksiyonu, malzeme yüzeylerinin en temel özelliklerinden biridir ve metalyarıiletken kontakların elektriksel özelliklerini doğrudan etkilemektedir (Ishii, Matsumura, Sakai, & Sakata, 2001) Üretilen bir devre elemanının tam kapasite ile çalışabilmesi, devreyi oluşturan temel yapının, bütün özelliklerinin bilinmesine bağlıdır. Schottky kontağın parametrelerini geleneksel ve yeni yaklaşımlarla çıkarmak için modelleme konusunda farklı bilimsel çalışmalar yapılmaktadır (Eledlebi, Ismail, & Rezeq, 2016;Qin et al, 2018;Rezeq et al, 2018;Tang & Stake, 2011;Timpa et al, 2021;Vieira & Cendula, 2021) Si ve n-tipi Si için) için tek elemanlı metalizasyon sistemlerinde kullanılmak için oldukça uygundur (Vali et al, 2018). Mo gibi yansıtıcı metaller ise Schottky kontakların, ısıl işlemlerde daha fazla esnekliğe ve yüksek sıcaklıklarda daha fazla güvenilirliğe sahip olması nedeniyle tercih edilmektedir (Takano et al, 2000).…”

Section: Introductionunclassified

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

Kahveci¹,

Kaya²

2022

Karadeniz Fen Bilimleri Dergisi

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Bu çalışmada, Al, Mo, Cu ve Ag metalleri ile n-tipi Si yarıiletkeni kullanılarak farklı metal/yarıiletken kontak yapısı modellenmiştir. Kontakların 0-0.25 V aralığında ileri beslem yarı logaritmik akım-gerilim karakteristiği termiyonik emisyon teorisi kullanılarak elde edilmiştir. Kontak modellerin metalin iş fonksiyonuna bağlı olarak engel yükseklikleri ve idealite faktörleri hesaplanmıştır. En düşük engel yüksekliği 0.64 eV olarak Al/n-Si model kontak için, en büyük engel yüksekliği ise 0.82 eV olarak Ag/n-Si model kontak için hesaplanmıştır. Kontak modelleri ayrı hacimsel hücrelere bölünerek bir ağ oluşturma işlemi gerçekleştirilmiştir. Böylece akım iletimi sırasında, kontak geometrisi boyunca, yüzeyin elektron konsantrasyonu, hol konsantrasyonu ve elektriksel potansiyel değişimleri modellenerek farklı parametrelerin etkileri simule edilerek kontağın üzerindeki değişimleri incelenmiştir.

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The dependence of Schottky junction (I–V) characteristics on the metal probe size in nano metal–semiconductor contacts

Cited by 23 publications

References 27 publications

Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces

Photodetection Characteristics of Gold Coated AFM Tips and n-Silicon Substrate nano-Schottky Interfaces

Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing

Farklı Metal/n-Si Kontakların Sayısal Olarak Modellenmesi ve Simülasyonu

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