The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

We have been observing the kinetic buildup of electrical conduction current upon x-ray irradiation in ZnSe single crystals. The objective is to understand the behavior of ZnSe crystals under x-ray irradiation, toward their potential use in x-ray detectors that do not require cooling and can operate above room temperature. The paper focuses on the factors that affect the behavior of traps at room temperature. A model is developed to understand the origin of the behavior of the conduction current under x-ray irradiation, taking into account the contributions from three types of traps for electrons (shallow, phosphorescent, and deep) and two luminescence centers (luminescence bands of 630 and 970 nm). Principally, the model is applied to the fitting of the experimental curves. Consequently, the work puts in evidence the role of electron accumulation on traps on the x-ray conduction current buildup on ZnSe crystals. We have obtained experimental dependencies of x-ray conduction current buildup current at 85 K, which indicates the presence of delay in comparison with x-ray luminescence buildup. This paper will demonstrate the effectiveness of our theoretical method in the framework of the multi-center model for wide-gap semiconductors.

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Light Sum Accumulation in ZnSe Crystals at X-Ray Excitation

Degoda

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Alizadeh

2019

Advances in Condensed Matter Physics

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This paper presents the results of the dose dependencies of the light sum accumulation in ZnSe single crystals at a different X-ray excitation at 85 K. The values of light sum accumulation at different deep traps were determined from the thermally stimulated luminescence and conductivity curves. It was confirmed that the accumulated light sum is uniquely determined by the dose of radiation only, that is, the product of the intensity of excitation by the time of X-ray exposure. The same result is also given by the theoretical consideration of the kinetics of the light sum accumulation on deep traps for a multicenter model of crystal phosphors.

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The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

Cited by 4 publications

References 24 publications

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TSL kinetic parameters and dosimetric properties of TlAlF4 crystal grown by Bridgman technique

Observation of the kinetic buildup of x-ray conduction current in ZnSe crystals

Light Sum Accumulation in ZnSe Crystals at X-Ray Excitation

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