The Design of Quasi-Super Junction and Novel Edge Termination in Junction Barrier Schottky Diode

Hong, Jhen-Min; Lai, Yun-Kai; Tzou, Chen-Dong; Lee, Kung‐Yen; Hsu, Chih-Chao

doi:10.1109/ifeec47410.2019.9015011

2019 IEEE 4th International Future Energy Electronics Conference (IFEEC) 2019

DOI: 10.1109/ifeec47410.2019.9015011

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The Design of Quasi-Super Junction and Novel Edge Termination in Junction Barrier Schottky Diode

Jhen-Min Hong

Yun-Kai Lai

Chen-Dong Tzou

et al.

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2022

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Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Arunraja¹,

Jayanthy²

2022

Mater. Res. Express

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In this paper, a novel super junction technique in AlGaN/GaN HEMT is proposed and analyzed. The novel super junction is capable of splitting the potential drops to two points rather than a single point in the lateral axis (channel axis). Technology Computer Aided Design (TCAD) physical simulator is used to investigate the proposed GaN HEMT. Analyses of the simulation results, shows that the breakdown voltage of proposed AlGaN/GaN HEMT with super junction is higher than that of a conventional device. Proposed device demonstrated a breakdown voltage improvement of 26%. This is due to the reduction of peak electric field using super junction and it is evidenced in the simulation. Further, the Johnson figure of merit (JFOM) is extracted. The JFOM of proposed and conventional AlGaN/GaN HEMT are 4.89×1012 V/s and 3.79×1012 V/s, respectively. The JFOM in the proposed device is improved by 23 %. This improvement is mainly due to the improvement of breakdown voltage rather than cut-off frequency. Overall, the proposed device is a promising candidate for high-power applications as it can withstand higher voltages without compromising the switching-frequency.

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Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Arunraja¹,

Jayanthy²

2022

Mater. Res. Express

View full text Add to dashboard Cite

show abstract

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The Design of Quasi-Super Junction and Novel Edge Termination in Junction Barrier Schottky Diode

Cited by 1 publication

References 7 publications

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

Novel super junction technique used in AlGaN/GaN HEMT for high power applications

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