The Design of the Traveling-Wave Dual-Gate MESFET

Abstract

An accurate method is presented to the analysis of the dual gate field effect transistor DGMESFET, taking into account the wave propagation phenomenon. For this, an analytical model is proposed to determine the characteristics of the DGMESFET, such as the S-parameters and gain. The results of this simulation are compared with the published experimental data. In this case a good agreement is obtained.