The determination of dislocation loop plane normals by transmission electron microscopy

Kelly, P.M.; Blake, Robert G.

doi:10.1002/pssa.2210250229

Cited by 9 publications

(1 citation statement)

References 7 publications

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“…These methods are based on differences between the projected loop image contrast lying either inside or outside the true loop position, depending on the image conditions. The contrast behaviour depends on the vacancy or interstitial type of the loop, its habit plane orientation with respect to the electron beam, the operating diffraction vector g, and the excitation error s. Dislocation loops in many materials have been analysed successfully using these methods [3][4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Analysis of dislocation loops by means of large-angle convergent beam electron diffraction

Jäger

Spiecker

Morniroli³

et al. 2002

J. Phys.: Condens. Matter

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Diffusion-induced dislocation loops in GaP and GaAs were analysed by means of large-angle convergent beam electron diffraction (LACBED) and conventional contrast methods of transmission electron microscopy. It is demonstrated that LACBED is perfectly suited for use in analysing dislocation loops. The method combines analyses of the dislocation-induced splitting of Bragg lines in a LACBED pattern for the determination of the Burgers vector with analyses of the loop contrast behaviour in transmission electron microscopy bright-field images during tilt experiments, from which the habit plane of the dislocation loop is determined. Perfect dislocation loops formed by condensation of interstitial atoms or vacancies were found, depending on the diffusion conditions. The loops possess {110}-habit planes and Burgers vectors parallel to 110 . The LACBED method findings are compared with results of contrast analyses based on the so-called 'inside-outside' contrast of dislocation loops. Advantages of the LACBED method consist in the possibility of determining the complete Burgers vector of the dislocation loops and of an unambiguous and fast loop type analysis.

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Section: Introductionmentioning

confidence: 99%

Analysis of dislocation loops by means of large-angle convergent beam electron diffraction

Jäger

Spiecker

Morniroli³

et al. 2002

J. Phys.: Condens. Matter

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A simple method for the analysis of dislocation loops by means of the inside-outside contrast on transmission electron micrographs

Föll¹,

Wilkens²

1975

Phys. Stat. Sol. (a)

101

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A new method is proposed for the analysis (vacancy or interstital) of dislocation loops by means of the so‐called inside‐outside contrast. A simple and straightforward recipe is developed which is applicable in the same manner to loops of edge and of non‐edge type irrespective of the loop orientation within the transmission foil; in particular, there is no reason for a subdivision of the loop orientations into “safe” and “unsafe” orientations as required when applying the method of Maher and Eyre.

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Dislocation loops in AlZn and AlZnMg alloys

Czurratis

Keoggel

Syneček

et al. 1988

Phys. Stat. Sol. (a)

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The existence and nature of dislocation loops (DL) and the heterogeneous nucleation of precipitates at them are studied in three Al‐(3.0, 12 and 15 at%) Zn as well as in two AlZn(2x)‐Mg(x) alloys (x = 1.0 and 1.5at%) using TEM. The most important results are: (i) Not only in the AlZn, but also in the AlZnMg alloys DL are observed, although in the latter, according to the literature their formation is not expected, (ii) The heterogeneous nucleation of precipitates is proceeding in quite a different manner in both alloy systems. The reasons supposed are discussed.

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The determination of dislocation loop plane normals by transmission electron microscopy

Abstract: The characterisation of non‐edge dislocation loops requires a relatively accurate knowledge of the loop plane normal. Two techniques for determining the normal to circular loops are described, together with the extension of these methods to the more complicated case of elliptical loops.

Cited by 9 publications

References 7 publications

Analysis of dislocation loops by means of large-angle convergent beam electron diffraction

Analysis of dislocation loops by means of large-angle convergent beam electron diffraction

A simple method for the analysis of dislocation loops by means of the inside-outside contrast on transmission electron micrographs

Dislocation loops in AlZn and AlZnMg alloys

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