The development and applications of nanoporous gallium nitride in optoelectronics: a review

Abstract

The development of nanoporous gallium nitride has widened the material properties and applications in third generation semiconductor area. Nanoporous gallium nitride has been used in laser emitters, light-emitting diodes, optical sensors, and optical energy storage devices. In this paper, we reviewed the most recent progress in the nanoporous GaN field by electrochemical etching. The properties of etched GaN have many superior properties compared with original GaN templates, such as stronger photoluminescence intensity, thermal conductivity, piezo-electricity, more accessible area, stress relief and refractive index. These advantages will make GaN more widely used in the field of optics and optoelectronics. Pore formation can be controlled by adjusting the applied potential and etching time. The nanoporous GaN makes the material of GaN have broader application prospects. We introduced in detail the application prospects of different GaN based processes and subsequent application methods in optoelectronics, sensors, and materials themselves. This review will help to improve further development of nanoporous GaN applications.

Electronic Properties of Hexagonal V-Shaped Gallium Nitride Pits

“…Gallium nitride is an interesting semiconductor material from the III–V group which in recent years has gained considerable attention due to its vast use in the fabrication of bright light-emitting diodes, laser diodes, high-power/high-temperature electronics, as well as in photoelectrocatalysis. − When prepared in a porous form, GaN often shows enhanced specific surface area, optical activity, luminescence efficiency, and unique electronic properties, as well as lower optical reflectance and tunable refractive index when compared with their flat counterparts. These enhanced features are desired when developing state-of-the-art reflective/refractive materials and high-efficiency photoelectronics and photochemical conversion devices.…”

“…These enhanced features are desired when developing state-of-the-art reflective/refractive materials and high-efficiency photoelectronics and photochemical conversion devices. All these significantly increase the applicability of porous GaN in photonic-based technologies . Another advantage of porous GaN relates to the relaxation of the stress generated at the substrate/GaN interface due to lattice constant mismatch .…”

“…All these significantly increase the applicability of porous GaN in photonic-based technologies. 6 Another advantage of porous GaN relates to the relaxation of the stress generated at the substrate/GaN interface due to lattice constant mismatch. 7 The reduced stress can have a positive effect on devices by minimizing their degradation performance.…”