Electrical Performance of Electrical Packaging (IEEE Cat. No. 03TH8710) 2003
DOI: 10.1109/epep.2003.1250049
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The development of a macro-modeling tool to develop IBIS models

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Cited by 18 publications
(12 citation statements)
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“…The classical IBIS model was generated by s2ibis3 [10]. All the simulations were done in HSPICE 2009.03 SP1.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…The classical IBIS model was generated by s2ibis3 [10]. All the simulations were done in HSPICE 2009.03 SP1.…”
Section: Simulation Resultsmentioning
confidence: 99%
“…The generated surrogate IBIS model is compared to the reference provided by the transistor-level simulation, and to the traditional IBIS model extracted from SPICE using the S2IBIS3 v1.0 tool [16]. [12] The test setup is shown in Fig.…”
Section: Examplementioning
confidence: 99%
“…The fundamental limitation of IBIS is that the physical effects to be considered are decided a priori when the equivalent circuit is defined, leaving little or no possibility for including the effects inherent to the device [6]. IBIS models also fail to capture the dynamic characteristics of the driver accurately as the modeling technique relies primarily on static characteristics [5]. IBIS models lose accuracy when extended to multiple ports [6].…”
Section: Introductionmentioning
confidence: 99%