The development of room temperature LEDs and lasers for the mid‐infrared spectral range

Abstract

There are many applications for mid‐infrared light sources which has stimulated intensive research into the physics and technology of narrow gap materials and devices. In this article we give an overview of the development of mid‐infrared LEDs and diode lasers being studied in our laboratory. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Direct evidence for suppression of Auger recombination in GaInAsSbP/InAs mid-infrared light-emitting diodes

“…[doi:10.1063/1.3646910] Mid-infrared (2-5 lm) light-emitting diodes (LEDs) are of increasing interest for a variety of technologically important applications including environmental gas monitoring, industrial process control, non-invasive medical diagnosis, and infrared spectroscopy. 1 However, the narrow band gap and density of states imbalance in InAs and related alloys give rise to strong non-radiative Auger recombination and inter-valence band absorption, which makes uncooled room temperature operation difficult to achieve. 2 LEDs emitting within this spectral range have previously been produced based on bulk InAsSb (Ref.…”

N incorporation and photoluminescence in In-rich InGaAsN grown on InAs by liquid phase epitaxy

“…From theory, it has been established that nitrogen-induced band gap reduction in these materials occurs in a similar way to that in low indium content InGaAsN [14] and it exhibits some interesting phenomena, such as, weaker interaction between the nitrogen level and the conduction band as compared to that in low In content InGaAsN [10] and a change in nitrogen bonding configuration upon annealing [12]. Furthermore, for this alloy there are many applications within the technologically important mid-infrared (2-5 µm) spectral range [15,16] including; laser based remote sensing of pollutant and greenhouse gases, thermal imaging, biomedical analysis and infrared countermeasures for security, as well as in thermo-photovoltaic devices [17]. Although midinfrared LEDs, lasers and photodetectors have been demonstrated [18][19][20][21], the fabrication of efficient and cost-effective light sources and detectors is challenging because of the unfavorable imbalance in the density of states (DOS) due to the light electron effective mass in InAs [22,23].…”

Spectral characteristics of mid-infrared light-emitting diodes based on InAs(Sb,P)

“…[3][4][5][6][7][8]. Основным недостатком существующих ИК светодиодов является их невысокая эффектив-ность: мощность светодиодов среднего ИК диапазона обычно не превышает нескольких десятков микро-ватт.…”