2022
DOI: 10.1109/ted.2022.3164372
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The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology

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Cited by 4 publications
(1 citation statement)
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“…18 A multi-objective optimization with ML approach has been applied in device-level design based on novel 2D channel materials 24 and advanced stacked nanosheet transistors. 25 Additionally, deep NN have been employed for generating black-box SPICE models 26,27 and extracting parameters for the industrial standard BSIM model. 28,29 To bring a new semiconductor technology into mass production, it is crucial to take into account various factors, such as materials, device design, and system integration.…”
mentioning
confidence: 99%
“…18 A multi-objective optimization with ML approach has been applied in device-level design based on novel 2D channel materials 24 and advanced stacked nanosheet transistors. 25 Additionally, deep NN have been employed for generating black-box SPICE models 26,27 and extracting parameters for the industrial standard BSIM model. 28,29 To bring a new semiconductor technology into mass production, it is crucial to take into account various factors, such as materials, device design, and system integration.…”
mentioning
confidence: 99%