2015
DOI: 10.1016/j.jallcom.2015.05.260
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The dielectric properties and microstructure of BaTiO3 ceramics with ZnO–Nb2O5 composite addition

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Cited by 21 publications
(7 citation statements)
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“…Relatively low dielectric permittivity can be attributed to the low achieved density, the presence of open porosity, inhomogeneous morphology and non-uniform grains distribution. Furthermore, the presence of secondary phases can be responsible for a decrease in dielectric constant [47].…”
Section: Resultsmentioning
confidence: 99%
“…Relatively low dielectric permittivity can be attributed to the low achieved density, the presence of open porosity, inhomogeneous morphology and non-uniform grains distribution. Furthermore, the presence of secondary phases can be responsible for a decrease in dielectric constant [47].…”
Section: Resultsmentioning
confidence: 99%
“…降低到 1604(BTZN6), tanδ 从 0.013(BTZN1)减小到 0.006(BTZN6), 10 MHz 下所有样品 tanδ <0.05, 这 是由于 ZN 的 ε r 和 tanδ 都远远低于 BT [36] 。所有 BTZN 陶瓷 ε r 随频率升高逐渐降低, 是由于不同极 化机制响应频率不同造成的。 低频下电子位移极化、 离子位移极化和偶极子取向极化等各种机制都对 ε r 有贡献, 高频时只有电子位移极化和离子位移极化 机制 [35] [38]…”
Section: Btzn 陶瓷的介电性能unclassified
“…为了提高 BT 基陶瓷 BDS, 许多研究人员在 BT 基或 BT-Bi 基陶瓷中添加玻璃来提高致密度, 同时 达到降低烧结温度的效果。 Wang 等 [30] 在 BT 陶瓷中 添加 BaO-SrO-TiO 2 -Al 2 O 3 -SiO 2 -BaF 2 玻璃, 当玻璃 添加量为 7wt%, BDS 提高到 94.6 kV/cm, 获得 0.32 J/cm 3 的 W rec 。Wang 等 [31] 在 Ba 0.4 Sr 0.6 TiO 3 陶瓷 中添加 BaO-B 2 O 3 -SiO 2 -Na 2 CO 3 -K 2 CO 3 玻璃, BDS 提 高到 280.5 kV/cm, 获得 0.72 J/cm 3 的 W rec 。 Yang 等 [32] 在 Ba 0. 4 [36] 是一种典型低温烧结微波介质陶瓷。 Wang 等 [37] 用固相法合成 BaTiO 3 -ZnNb 2 O 6 (BT-ZN) 陶瓷, 结果表明添加 ZN 显著降低 BT 陶瓷烧结温 度。Yan 等 [38] 和 Yang 等 [39] [3] , 而 ZN 陶瓷烧结温度仅有 1150 ℃ [36] , 说明添加 ZN 有效降低了 BTZN 陶瓷烧 结温度。而最佳烧结温度下 BTZN 陶瓷密度随 ZN 含量增加从 5.808 g/cm 3 (BTZN1)降低到 5.701 g/cm 3 (BTZN6), 主要由于 ZN 陶瓷的理论密度(5.645 g/cm 3 ) 比 BT 陶瓷(6.018 g/cm 3 )低 [37]…”
unclassified
“…(Hu et al, 2011.;Ertuğ, 2013). Possui constante dielétrica relativamente alta (Yan et al, 2015), em temperatura ambiente no seu estado de pureza, em torno de 1.500 a 2.000 e resistividade na ordem de grandeza de até 10 10 .cm, aproximadamente (Mahbub et al, 2013) . Quando dopado com óxidos metálicos a sua constante dielétrica tende a se elevar em ordens de 10³ a 10 5 (Luoa et al, 2018) e a sua resistividade elétrica tende a diminuir para ordens entre 10 e 10 4 .cm, podendo, desta forma, exercer características de material semicondutor (Cheng, 1989;Pu et al, 2005;Gheno et al, 2007) Óxidos da família perovskita são amplamente utilizados na indústria de eletrocerâmicos, eletroeletrônicos, eletromecânicos e eletro-ópticos (Al-Shakarchi, 2010;López-Joárez et al, 2011;Asimalopoulos et al, 2014).…”
Section: Introductionunclassified