The diffusion of arsenic in Hg<sub>0.8</sub>Cd<sub>0.2</sub>Te

Shaw, D.

doi:10.1088/0268-1242/9/9/025

Cited by 15 publications

(26 citation statements)

References 6 publications

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“…The comparison of the results with those presented in [5][6] (see Fig.7) shows that the diffusion coefficient D As (B) exactly corresponds to the value of D As found in [5][6]. Indeed, according to [6] at the Hg-saturated conditions at the temperature below 450°C:…”

Section: Discussionsupporting

confidence: 75%

“…6). On the other hand, the model [6] contradicts to the experimental data concerning the charge state of the main defects in the fast diffusion region. According to [6], at T > 500°C and P Hg > 1⋅10…”

Section: Discussioncontrasting

confidence: 66%

“…is the concentration of the double charged Hg vacancies, one can make sure that the result of interpolation of the data [5][6] in the region of high temperature for the medium pressure P Hg = 2.8⋅10 5 Ра is…”

Section: Discussionmentioning

confidence: 99%

“…On the basis of the own experimental data the authors [5] put forward an assumption that the As diffusion occurs through the formation and migration of the mobile defects of the As Hg type. They assume that the substitution centers of the As Hg type are the single charged donors (As The detailed analysis of this and other proposed mechanisms has been made by Shaw in [4,6]. According to this analysis among all known models the only mechanism, which is the movement of the As · Hg cations via vacancy mechanism, can explain the character of D As change with P Hg which is observed in Hg 0.8 Cd 0.2 Te.…”

Section: Discussionmentioning

confidence: 99%

“…are commonly studied. The first two of them are the most investigated dependencies in the case of the As diffusion in Cd X Hg 1-X Te crystals [5,6]. Because of this the aim of the paper is the determination of the concentration dependence of As diffusivity by means of studying the As diffusive distribution in Cd X Hg 1-X Te single crystals and epitaxial structures in the temperature range T = 500 ÷ 600°C.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

High temperature arsenic doping of CdHgTe epitaxial layers

Власов¹,

Bogoboyashchyy²,

Bonchyk³

et al. 2004

Cryst. Res. Technol.

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Experimental results on solid-state arsenic doping of the n-type bulk and ISOVPE epitaxial Cd X Hg 1-X Te (X = 0.19÷0.3) alloys are presented. The arsenic doped thin epitaxial Cd x Hg 1-x Te films (n As ≈ 5⋅10 16 ÷1⋅1020 cm -3; d =2÷5 µm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures Т = 500÷600°С under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermoemf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed.

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