The diffusion of copper in cadmium telluride

Jones, E. D.; Stewart, N.M.; Mullin, J. B.

doi:10.1016/0022-0248(92)90753-6

Cited by 65 publications

(39 citation statements)

References 3 publications

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“…For fast diffusing species such as Cu and Ag the activation energy is less than 0.7 eV, implying that interstitial atomic movement is the dominant diffusion mechanism. Results of the diffusion of Cu in CdTe single crystals study in the temperature range 473-673 K using a radiotracer sectioning technique led to conclusion in [27] that complex diffusion occurred via a defect of the form (Cu i Cd v )'. The major portion of the activation energy (0.57 eV) for the diffusion was taken up in the formation of the defect rather than in its migration through the lattice.…”

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 98%

“…A much faster diffusion mechanism (%100 times faster), which did not show any consistent behaviour with temperature, was also observed in the diffusion profiles. [27] For slow diffusing species like Au, E a reaches 2 eV, and vacancy diffusion is probably the dominant mechanism.…”

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

“…Though three temperature dependencies of In, Ga and Tl diffusivity intersect in the same point at T = 1390 K (i.e. in CdTe molten state), it can't be a solid base for a conclusion about the data fit to the NMR [37,38] Hg [39,40] *Zn [35] Zn [36,59] ln(D 0 , cm 2 /s) [24,26,27] Cu [25,28,29] *Ag [30] Ag [28,31] Au [34] ln(D Li [22] Na [23] Al [22] *Ga [41,42] In [23,43,48] *In [44][45][46][47] *Tl [49] *Ge [50] *Sn [51] ln(D T 0 (a) (b) Fig. 4 (a) The plot of the ln D 0 versus DE a for the diffusivity of the Groups I, III and IV impurities in CdTe crystals and thin films.…”

Section: Diffusion Of Ia Iiia and Iva Groups Impuritiesmentioning

confidence: 99%

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Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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Understanding of self-and dopant-diffusion in semiconductor devices is essential to our being able to assure the formation of well-defined doped regions. In this paper, we compare obtained in the literature up to date the Arrhenius' parameters (D=D 0 exp(2DE a /kT)) of point-defect diffusion coefficients and the I-VII groups impurities in CdTe crystals and films. We found that in the diffusion process there was a linear dependence between the pre-exponential factor, D 0 , and the activation energy, DE a , of different species: This was evident in the self-diffusivity and isovalent impurity Hg diffusivity as well as for the dominant IIIA and IVA groups impurities and Chlorine, except for the fast diffusing elements (e.g., Cu and Ag), chalcogens O, S, and Se, halogens I and Br as well as the transit impurities Mn, Co, Fe. Reasons of the lack of correspondence of the data to compensative dependence are discussed.

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Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 98%

Section: Diffusion Of Isovalent and Ib Group Fast Impuritiesmentioning

confidence: 99%

Section: Diffusion Of Ia Iiia and Iva Groups Impuritiesmentioning

confidence: 99%

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Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Shcherbak

Kopach

Fochuk

et al. 2015

J. Phase Equilib. Diffus.

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“…Moreover, Cu can diffuse rapidly in semiconductors, affecting the stability of solar cells. [18][19][20][21] Recent combined experimental and theoretical studies 22 show that a Cd-rich growth condition is required to achieve long minority-carrier lifetime ($20 ns) because it can suppress the Te Cd antisites. This suggests that substitutionally doping As or P on the Te site under Cd-rich growth conditions should simultaneously increase the hole density and minority carrier lifetime.…”

mentioning

confidence: 99%

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing

Yang

Yin

Park

et al. 2015

Journal of Applied Physics

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One of the main limiting factors in CdTe solar cells is its low p-type dopability and, consequently, low open-circuit voltage (VOC). We have systematically studied P and As doping in CdTe with first-principles calculations in order to understand how to increase the hole density. We find that both P and As p-type doping are self-compensated by the formation of AX centers. More importantly, we find that although high-temperature growth is beneficial to obtain high hole density, rapid cooling is necessary to sustain the hole density and to lower the Fermi level close to the valence band maximum (VBM) at room temperature. Thermodynamic simulations suggest that by cooling CdTe from a high growth temperature to room temperature under Te-poor conditions and choosing an optimal dopant concentration of about 1018/cm3, P and As doping can reach a hole density above 1017/cm3 at room temperature and lower the Fermi level to within ∼0.1 eV above the VBM. These results suggest a promising pathway to improve the VOC and efficiency of CdTe solar cells.

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“…13,14 Cu i + was suggested to be mobile at room temperature, and this is consistent with the cell stressing tests carried out at room temperature in our laboratory. [12][13][14][15] It was reported that Cu doping of CdTe absorber layer could lead to Cu diffusion to the CdTe/CdS interface. 16 In a solar cell structure, accumulation of Cu near the CdS/CdTe junction interface would have profound influence on the cell performance.…”

Section: Introductionmentioning

confidence: 99%

Cu-doped CdS and its application in CdTe thin film solar cell

Deng

Yang

et al. 2016

AIP Advances

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Cu is widely used in the back contact formation of CdTe thin film solar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the cell junction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTe solar cell stability. In this study Cu was intentionally doped in CdS thin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cu doping, the VCd− and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdS film during the air and the CdCl2 annealing. CdTe thin film solar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the doped Cu in the CdS window layer was not stable at both room and higher temperatures.

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The diffusion of copper in cadmium telluride

Cited by 65 publications

References 3 publications

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Empirical Correlations Between the Arrhenius’ Parameters of Impurities’ Diffusion Coefficients in CdTe Crystals

Enhanced p-type dopability of P and As in CdTe using non-equilibrium thermal processing

Cu-doped CdS and its application in CdTe thin film solar cell

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