2019
DOI: 10.1039/c9na00036d
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The dimensional crossover of quantum transport properties in few-layered Bi2Se3 thin films

Abstract: Topological insulator bismuth selenide (Bi2Se3) thin films with a thickness of 6.0 quintuple layers (QL) to 23 QL are deposited using pulsed laser deposition (PLD).

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Cited by 14 publications
(7 citation statements)
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“…Typically, sheet carrier densities in the order of (one order of magnitude higher than in MBE-grown samples, indicating more defects) and mobilities in the range of are measured [ 34 , 53 ]. Under certain growth conditions, films nearly as good as the ones obtained in MBE with high mobilities close to and low carrier densities have been also reported [ 54 ]. Other reported growth methods are chemical vapor deposition (CVD) and magnetron sputtering (MS).…”
Section: Wal In Bi 2 Se 3 Thin Filmsmentioning
confidence: 99%
See 2 more Smart Citations
“…Typically, sheet carrier densities in the order of (one order of magnitude higher than in MBE-grown samples, indicating more defects) and mobilities in the range of are measured [ 34 , 53 ]. Under certain growth conditions, films nearly as good as the ones obtained in MBE with high mobilities close to and low carrier densities have been also reported [ 54 ]. Other reported growth methods are chemical vapor deposition (CVD) and magnetron sputtering (MS).…”
Section: Wal In Bi 2 Se 3 Thin Filmsmentioning
confidence: 99%
“…For specific applications, other substrates can be used instead of sapphire. For example, the dielectric properties of or make them ideal for gating purposes [ 44 , 54 ]. In films grown on ambipolar transport has been accomplished several times [ 12 , 32 ].…”
Section: Wal In Bi 2 Se 3 Thin Filmsmentioning
confidence: 99%
See 1 more Smart Citation
“…Fortunately, the recent results demonstrate that the combination of Bi 2 Se 3 with traditional Si semiconductor arouses great concern because of its mature process, low price, and abundant properties, all of which play an important role in large-scale integrated devices. Moreover, the helical characteristics of the Bi 2 Se 3 topological surface can effectively suppress electron backscattering and enhance carrier mobility, and an obvious exciton gain behavior can be obtained when combining with the Si material . Besides, Bi 2 Se 3 belongs to a triangular crystal system with a layered structure, in which the single molecular layer consists of five atomic layers of Se(1)–Bi–Se(2)–Bi–Se(1) bonded covalently with van der Waals forces between two layers with a layer spacing of about 1 nm, so that high-quality thin films can be easily deposited on the Si substrates by pulsed laser deposition (PLD), metal-organic chemical vapor deposition (MOCVD), and molecular beam epitaxy (MBE). Based on these advantages, some researchers have begun to prepare Bi 2 Se 3 /Si heterostructure, intending to fully utilize their respective excellent properties to achieve a synergistic effect. However, the study of Bi 2 Se 3 /Si is still in its infancy, and the involved physical principles also lack a comprehensive and systematic exploration.…”
Section: Introductionmentioning
confidence: 99%
“…At present, there have been many reports on the synthesis of low-dimensional Bi 2 Se 3 nanomaterials. In comparison with other techniques, physical vapor deposition (PVD) can be used to prepare Bi 2 Se 3 nanomaterials on different substrates with a better crystallinity and a more controllable thickness . Among PVD techniques, vapor–solid growth (VSG) is more cost effective with higher synthesis efficiency in comparison to molecular beam epitaxy (MBE), which causes it to be widely used .…”
Section: Introductionmentioning
confidence: 99%