2021
DOI: 10.1109/jestpe.2020.2981536
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The Diode-Assisted Gate-Commutated Thyristor—Operation, Design, and Testing

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Cited by 4 publications
(5 citation statements)
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“…The diode-assisted gate commutated thyristor (DAGCT) concept was proposed by Dr. Rik W. De Doncker [23] [24], which is similar to the IGCT, by replacing the pre-charged capacitor bank in the IGCT with multiple diodes connected in series forming a diode-stack in the GCT cathode terminal, as shown in Fig. 22 (a).…”
Section: Dagct Based Sscbsmentioning
confidence: 99%
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“…The diode-assisted gate commutated thyristor (DAGCT) concept was proposed by Dr. Rik W. De Doncker [23] [24], which is similar to the IGCT, by replacing the pre-charged capacitor bank in the IGCT with multiple diodes connected in series forming a diode-stack in the GCT cathode terminal, as shown in Fig. 22 (a).…”
Section: Dagct Based Sscbsmentioning
confidence: 99%
“…All other electrical and mechanical components are connected by means of mechanical pressure. [23] At 550 A conduction current, the diode-stack contributes to ~ 65% conduction losses of the DAGCT, with ~ 4.1 V forward voltage drop [23]. However, to achieve higher interruption current, higher diode forward voltage drop is required.…”
Section: Dagct Based Sscbsmentioning
confidence: 99%
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“…On the other hand, modified thyristor structures (GTO/GCT, IGCT, and ETO) integrated with an active turn-off feature have been developed and thoroughly investigated [19][20][21][22][23][24][25]. These active-turn-off thyristors have been extensively studied [26][27][28][29][30][31][32]. The regenerative braking capability of SSCBs was presented in [33]; however, the system complexity and cost can be higher, and the current breaking time is approximately 40 ms.…”
Section: Introductionmentioning
confidence: 99%