The disorder scattering in zincblende narrow‐gap semiconducting mixed crystals

Kossut, J.

doi:10.1002/pssb.2220860220

Cited by 36 publications

(4 citation statements)

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“…(5) Alloy disorder scattering (AD), that appears only in the ternary alloys, is due to the fact that the V Pb and V Sn atomic potentials are not the same. This results in perturbations of crystal periodicity and, consequently, in electron scattering, see [33,34]. The disorder scattering is important at high values of x and low temperatures.…”

Section: Theorymentioning

confidence: 99%

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Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

et al. 2016

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The transverse Nernst-Ettingshausen (N-E) effect and electron mobility in Pb 1−x Sn x Se alloys are studied experimentally and theoretically as functions of temperature and chemical composition in the vicinity of vanishing energy gap E g . The study is motivated by the recent discovery that, by lowering the temperature, one can change the band ordering from a trivial to nontrivial one in which the topological crystalline insulator states appear at the surface. Our work presents several new aspects. It is shown experimentally and theoretically that the bulk N-E effect has a maximum when the energy gap E g of the mixed crystal goes through zero value. This result contradicts the claim made in the literature that the N-E effect changes sign when the gap vanishes. We successfully describe dc transport effects in the situation of extreme band's nonparabolicity which, to the best of our knowledge, has never been tried before. A situation is reached in which both two-dimensional bands (topological surface states) and three-dimensional bands are linear in electron k vector. Various scattering modes and their contribution to transport phenomena in Pb 1−x Sn x Se are analyzed. As the energy gap goes through zero, some transport integrals have a singular (nonphysical) behaviour and we demonstrate how to deal with this problem by introducing damping.

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Section: Theorymentioning

confidence: 99%

“…where U v ad is the matrix element of the potential difference V P b−Sn for the valence band. According to the theory, see [33], there exists a relation…”

Section: ) Scattering By Acoustic Phonons (Ac) It Involves Conduction...mentioning

confidence: 99%

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

et al. 2016

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Section: Improvement Of Electrical Propertiesmentioning

confidence: 99%

“…The comparison shows again that the shift depends on x in a nonlinear way. The difference between the values of ΕFe in HgSe and ZnSe with respect to the 8 band edges determines the value of the parameter W which we shall need further when calculating the contribution to the scattering rate due to disorder scattering [9].Our analysis of mobility assumed that only two scattering mechanisms of the conduction electrons are effective at low temperatures: the scattering from ionized impurities (whose number was assumed to be equal to the number of ionized Fe donors and whose screening was taken to be given by the Thomas-Fermi screening radius) and the alloy scattering. One obtains, then, the values of the mobility shown by squares in Fig.…”

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Improvement of Electrical Properties of Hg_1-xZn_xSe upon Doping with Fe

et al. 1992

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Results of measurements of electron concentration and mobility in mixed crystals of Hg1-xZnxSe (0 < x < 0.07) doped with resonant Fe donors (0 < nFe < 5 x 10 19 cm-3 ) at liquid helium temperatures are presented.The data show that there is a considerable improvement of the electrical properties of the material when Fe impurities are present. The analysis of the mobility in terms of the scattering from ionized centers (accounting for possible spatial correlation of impurity charges) and the alloy scattering is in agreement with the measured data.PACS numbers: 72.80. Ey, 72.20.Fr, 71.55.Fr Mixed crystals of II-VI semiconduction containing Zn have attracted recently a great deal of interest. This is related to the fact that the presence of Zn in, say, HgTe improves considerably mechanical [1] and electrical [2] properties compared to the case of, e.g., Cd containing compounds. Therefore, we have studied mixed crystals of Hg1-xZnxSe doped with resonant Fe hoping that the improvement related to the stabilizing effect of Zn observed by Cobb et al. [2] will combine with a similar effect related to the presence of Fe [3] and result in a particularly attractive semiconducting material from the point of view of possible applications. Furthermore, doping with iron is known to lead to an increased mobility, as evidenced by the study of the case of HgSe:Fe in the mixed valence regime [4]. The existence of similar enhancement in Hg1-x Zn x Se:Fe was confirmed in the course of our study.The highest molar fraction x attained in the crystals grown by the modified Bridgman method was 0.072. The Zn fraction in the studied samples was determined by energy dispersive X-ray analysis. The concentration of intentional Fe donors ranged from nFe = 0 (undoped samples), through intermediate Fe concentrations (corresponding to completely ionized system of donors at low temperatures), up to Fe = 5 x 10 19 cm-3 , when only a fraction of Fe donors were ionized (mixed valence regime).Electron conductivity and the Hall effect at liquid helium temperatures were measured and from those values the concentration of conduction electrons as well as their mobility were determined. As in HgSe:Fe, there is an increase in the electron concentration together with the amount of Fe impurities present in the (681) 682 W. Dobrowolski, E. Grodzicka, J. Kossut, B. Witkowska crystals, followed by a saturation (at high Fe doping levels) whose value depends on Zn molar fraction. The latter dependence shows that there is a relative shift of the resonant Fe level and the bottom of the conduction band induced by alloying with Zn. The observed mobility values, particularly in the samples with high concentrations of Fe, are quite high -indicating good quality of the crystals studied here. There are clear indications that the mechanism of the mobility enhancement, seen previously in HgSe:Fe [4], is also active in the present case of Hg 1 -xΖnx Se:Fe.To analyze the data quantitatively we have to incorporate in the appropriate model of the band structure the varia...

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Spatially Variable Drift Mobility Model for Hg1−xCdxTe Diodes I. Analytical Base and Fit to Hall Data

Schenk

1990

phys. stat. sol. (a)

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A microscopic model of the drift mobility in Hg1−xCdxTe (x ≈ 0.2) is established on the basis of the Kohler variational method. The relevant scattering michanisms, degeneracy, Kane band structure, and structural point defects are included. The dependence of the electron mobility on the Fermi level position is investigated. The model is compared with experimental Hall data taking into account calculated Hall factors. The spatial variability of electron and heavy hole drift mobilities in a 1Dn+n− p‐junction diode is demonstrated. The mobility routine, which can easily be modified for other materials, will be applied in a 2D device simulation package.

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The disorder scattering in zincblende narrow‐gap semiconducting mixed crystals

Cited by 36 publications

References 29 publications

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

Improvement of Electrical Properties of Hg_1-xZn_xSe upon Doping with Fe

Spatially Variable Drift Mobility Model for Hg1−xCdxTe Diodes I. Analytical Base and Fit to Hall Data

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The disorder scattering in zincblende narrow‐gap semiconducting mixed crystals

Cited by 36 publications

References 29 publications

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1−xSnxSe

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb1−xSnxSe

Improvement of Electrical Properties of Hg1-xZnxSe upon Doping with Fe

Spatially Variable Drift Mobility Model for Hg1−xCdxTe Diodes I. Analytical Base and Fit to Hall Data

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Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

Nernst-Ettingshausen effect at the trivial-nontrivial band ordering in topological crystalline insulator Pb_1−xSn_xSe

Improvement of Electrical Properties of Hg_1-xZn_xSe upon Doping with Fe