The dissociation process in plasma-enhanced chemical vapor deposition using tetraethoxysilane

Abstract

Dissociation in plasma‐enhanced chemical vapor deposition for SiO2 deposition using tetraethoxysilane (TEOS) was investigated by means of mass spectrometry. First we obtained the basic dissociation patterns of TEOS by electron impact. It was shown that TEOS was dissociated by electron impact at low electron energies below 7 eV, removing the ethyl group (C2H5). Next we determined dissociation patterns in TEOS/He plasma in order to eliminate the effect of oxidation. Finally, dissociation in TEOS/O2 plasma was investigated. It was found that oxidation plays an indispensable role in the deposition of high‐quality SiO2 films due to the decrease in high‐molecular‐weight compounds with carbon and hydrogen, although TEOS is highly dissociated by electron impact. © 1999 Scripta Technica, Electr Eng Jpn, 129(4): 32–38, 1999

Numerical modeling of gas‐phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

“…[53] However, these particles cannot be detected in the presence of oxygen at LP. [54,55] At AP, no heavy ions have been reported. Hence, ions heavier than TEOS are neglected in this work.…”