The distinction of different kinds of thermally induced defects in silicon

Abstract

While thermally induced defects (TID) caused by the action of iron show a formation energy of E = 2.9 eV, TID's annihilating a t room temperature has a formation energy of E = (1.2 f 0.2) eV. Corresponding resist,ivity measurements with p-type Si of 0.1 to 10 Rcm were carried out after quenching. The boron concentration being the upper limit for the formation, pair formation of boron with vacancies or Si self-interstitials is supposed to be the reason. Some peculiarities in the behaviour led to a better understanding of oxygen donors.Neben den thermisch induzierten Defekten (TID) mit einer Bildungsenergie von E = 2,9 eV, welche auf die Wirkung von Eisen zuriickgefuhrt werden, ergeben die bereits bei Raumtemperatur ausheilenden TID eine Bildungsenergie von E = (1,2 5 0,2) eV. Dazu werden Messungen des spezifischen Widerstandes an p-Si von 0,l bis 10 Rcm nach Abschrecken durchgefiihrt. Da die Borkonzentration eine obere Grenze fur die Bildung darstellt, wird eine Paarbildung von Bor mit Leerstellen oder Si-Eigenzwischengitteratomen als Ursache angenommen. Einige Besonderheiten im Verhalten liefern auch Anregungen zum Verstandnis von Sauerstoffdonatoren.

Neutralization of Acceptors and Formation of Agglomerates in Silicon Wafers Due to Intrinsic Point Defects Created by Chemomechanical Polishing and by Quenching

“…(1) TID 1, revised Fig. 1 of [ 8 ] , c = = loz4 exp (-1.6 eV/kT) (2) c:q [32, 331; (3) cFq [32, 331; (4) Probably the TID 3 and the ball-like agglomerates [12] are controlled by the same intrinsic point defects as the TID 1 and the structural defects described in this work.…”

“…The acceptor concentration was determined in [8] from the resistivity before and after quenching according to [24]. The corrected acceptor concentration was redetermined according to Irvin [25].…”