The dual role of PZT in metal-PZT-Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; structure for nonvolatile memory cell

The structural and electrical properties of a metal-ferroelectric-insulator-semiconductor (MFIS) structure with an Al2O3 layer prepared by using the molecular atomic deposition method and Pb(Zr0.52Ti0.48)O3 (PZT) deposited by the radio frequency magnetron sputtering method are investigated. PZT exhibits a very smooth surface and (110) orientation of the perovskite phase. The MFIS structure shows well-behaved clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization under a sweep voltage up to ±40 V. Memory windows of 1.9 V and 18.14 V in conjunction with leakage current density of 2.42 × 10 −7 A/cm 2 and 8.28 × 10 −7 A/cm 2 are obtained under sweep voltages of ±5 V and ±20 V, respectively.

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The Structural and Electrical Properties of Al/Pb(Zr _0.52 Ti _0.48 )O ₃ /Al ₂ O ₃ /Si with an Al ₂ O ₃ Layer Prepared by using the Molecular Atomic Deposit

Yang

Zhou

Peng

et al. 2012

Chinese Phys. Lett.

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The dual role of PZT in metal-PZT-Al<inf>2</inf>O<inf>3</inf> structure for nonvolatile memory cell

Cited by 1 publication

References 2 publications

The Structural and Electrical Properties of Al/Pb(Zr _0.52 Ti _0.48 )O ₃ /Al ₂ O ₃ /Si with an Al ₂ O ₃ Layer Prepared by using the Molecular Atomic Deposit

The Structural and Electrical Properties of Al/Pb(Zr _0.52 Ti _0.48 )O ₃ /Al ₂ O ₃ /Si with an Al ₂ O ₃ Layer Prepared by using the Molecular Atomic Deposit

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The dual role of PZT in metal-PZT-Al<inf>2</inf>O<inf>3</inf> structure for nonvolatile memory cell

Cited by 1 publication

References 2 publications

The Structural and Electrical Properties of Al/Pb(Zr 0.52 Ti 0.48 )O 3 /Al 2 O 3 /Si with an Al 2 O 3 Layer Prepared by using the Molecular Atomic Deposit

The Structural and Electrical Properties of Al/Pb(Zr 0.52 Ti 0.48 )O 3 /Al 2 O 3 /Si with an Al 2 O 3 Layer Prepared by using the Molecular Atomic Deposit

Contact Info

Product

Resources

About

The Structural and Electrical Properties of Al/Pb(Zr _0.52 Ti _0.48 )O ₃ /Al ₂ O ₃ /Si with an Al ₂ O ₃ Layer Prepared by using the Molecular Atomic Deposit

The Structural and Electrical Properties of Al/Pb(Zr _0.52 Ti _0.48 )O ₃ /Al ₂ O ₃ /Si with an Al ₂ O ₃ Layer Prepared by using the Molecular Atomic Deposit