The early stage of the laser-induced oxidation of titanium substrates

Lavisse, L.; Grevey, D.; Langlade, C.; Vannes, B.

doi:10.1016/s0169-4332(01)00761-9

Cited by 68 publications

(39 citation statements)

References 15 publications

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“…Various techniques can be used to obtain a titanium oxide coating: cathodic deposition [9], plasma deposition [10], laser deposition [11], magnetron sputtering [12], thermal oxidation [13], electrolytic oxidation (anodizing) [7,14], and laser oxidation [8,14,15].…”

Section: Introductionmentioning

confidence: 99%

The influence of process parameters on the laser-induced coloring of titanium

et al. 2013

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This paper presents the results of the measurements and analysis of the influence of laser process parameters on the color obtained. The study was conducted for titanium (Grade 2) using a commercially available industrial pulsed fiber laser. It was determined how a variety of different laser process parameters, such as laser power, the scanning speed of the material, the temperature of the material, the size of the marked area, and the position of the sample, relative to both the focal plane and the center of the working field of the system, affect the repeatability of the colors created. For an objective assessment of color changes, an optical spectrometer and the CIE color difference parameter E * ab were used. Our paper explains why the tolerance of process parameters highly depends on the specific color. Additionally, a comparison of the results for titanium with those obtained for stainless steel in a previous study is presented. Based on this analysis, a number of necessary modifications are proposed to laser systems commonly used for monochrome marking in order to improve repeatability in color marking.

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Section: Introductionmentioning

confidence: 99%

The influence of process parameters on the laser-induced coloring of titanium

et al. 2013

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“…Various laser sources (Ar + [7], CO 2 [8], ruby [9], excimer [10]) with continuous or pulsed beams have been used to process Si or metal surfaces for the oxidation, and successful growth of thin oxide layers has been demonstrated. A pulsed Nd : YAG laser operating at 1064 nm has recently been used for oxidation of metal surfaces to obtain high-κ dielectrics [11]. The emitted laser energy is 1.165 eV at 1064 nm, which is slightly more than the bandgap energy of Si crystal; the absorption by the Si surface is then expected to be weak due to the limiting value of the photon energy.…”

Section: Introductionmentioning

confidence: 99%

Oxidation of Si surface by a pulsed Nd : YAG laser

Aygün¹,

Atanassova²,

Alacakir³

et al. 2004

J. Phys. D: Appl. Phys.

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SiO 2 thin films have been obtained by 1064 nm Nd : YAG laser oxidation of p-Si in the presence of O 2 . The thickness uniformity, dielectric and electrical properties of the layers have been studied. The effect of both the laser beam energy density and the substrate temperature on the oxide growth is also discussed. It was established that there exists an interval of laser beam energy density in which the oxidation occurs without surface melting. The oxidation process is controlled by the laser beam energy density rather than by the substrate temperature (673-748 K) and the higher laser power results in a thicker oxide. X-ray photoelectron spectroscopy (XPS) was used to provide information on the oxide composition. XPS results revealed that the as-grown oxide is a mixed layer of SiO 2 and Si 2 O, which are distributed nonuniformly through the depth. MOS capacitors fabricated on the grown oxide exhibited typical capacitance-voltage, conductance-voltage characteristics. However, the density of interface states and oxide charge density were found to be higher than the typical values of thermally grown oxides. The quality of the oxide layers can be further improved by optimization of the process parameters and/or by post-processing of the grown films. It is concluded that the SiO 2 films formed by the technique of Nd : YAG laser-enhanced oxidation at low temperature are potentially useful for device applications.

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“…Research group Starting material Laser line Titanium (Pérez del Pino et al 2002) Titanium targets =1064 nm (Lavisse, L. et al 2002) Titanium targets =1064 nm (Camacho-López, S. et al 2008) Titanium thin films =532 nm Chromium (Dong, Q. et al 2002) Chromium films =1064 nm Steel (Pereira, A. et al 2004) Steel target 1064 nm 532 nm Molybdenum Our work Molybdenum Thin Films =532 nm Table 1. Some works on Nd-YAG pulsed laser oxidation.…”

Section: Methodsmentioning

confidence: 99%